Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Hao Zhu"'
Autor:
Zhenhai Li, Jinchen Wei, Jialin Meng, Yongkai Liu, Jiajie Yu, Tianyu Wang, Kangli Xu, Pei Liu, Hao Zhu, Shiyou Chen, Qing-Qing Sun, David Wei Zhang, Lin Chen
Publikováno v:
Nano Letters. 23:4675-4682
Autor:
Yuan Zhang, Hao Zhu, Zi Ying, Xinghua Gao, Wei Chen, Yueping Zhan, Lingyan Feng, Chung Chiun Liu, Yifan Dai
Publikováno v:
Nano Letters. 22:6833-6840
Autor:
Qingxuan Li, Tianyu Wang, Yuqing Fang, Xuemeng Hu, Chengkang Tang, Xiaohan Wu, Hao Zhu, Li Ji, Qing-Qing Sun, David Wei Zhang, Lin Chen
Publikováno v:
Nano Letters. 22:6435-6443
In order to imitate brain-inspired biological information processing systems, various neuromorphic computing devices have been proposed, most of which were prepared on rigid substrates and have energy consumption levels several orders of magnitude hi
Autor:
Jialin Meng, Tianyu Wang, Hao Zhu, Li Ji, Wenzhong Bao, Peng Zhou, Lin Chen, Qing-Qing Sun, David Wei Zhang
Publikováno v:
Nano Letters. 22:81-89
With the development and application of artificial intelligence, there is an appeal to the exploitation of various sensors and memories. As the most important perception of human beings, vision occupies more than 80% of all the received information.
Publikováno v:
Nanotechnology. 33(25)
Gas sensors have been widely utilized penetrating every aspect of our daily lives, such as medical industry, environmental safety testing, and the food industry. In recent years, two-dimensional (2D) materials have shown promising potential and promi
Publikováno v:
Nanotechnology. 34:055001
As down scaling of transistors continues, there is a growing interest in developing steep-slope transistors with reduced subthreshold slope (SS) below the Boltzmann limit. In this work, we successfully fabricated steep-slope MoS2 transistors by incor
Publikováno v:
Diamond and Related Materials. 91:213-218
For silicon carbide (SiC) power MOSFETs, gate oxide reliability under high electric stress leading to device failure has become one of the major concerns in actual applications. In this paper, a novel SiC MOSFET with center dielectric layer (CDMOSFET
Publikováno v:
Nanotechnology. 32:345202
The non-ideal contact between the metal electrode and semiconducting channel has become one of the major bottlenecks degrading the performance of field-effect transistors (FETs) based on two-dimensional (2D) materials. The formation of the Schottky b
Autor:
Simeng Zhang, Zihan Xu, Zhengzong Sun, Zhi-Jun Qiu, Lin Chen, Hu Xu, Kun Ba, Yangye Sun, Fuyou Liao, Hao Zhu, Qing-Qing Sun, Wenzhong Bao, David Wei Zhang, Peng Zhou
Publikováno v:
Nanotechnology. 30:174002
Chemical vapor deposition synthesis of semiconducting transition metal dichalcogenides (TMDs) offers a new route to build next-generation semiconductor devices. But realization of continuous and uniform multilayer (ML) TMD films is still limited by t
Autor:
Jing Xu, Shi-Jin Ding, Yang Wang, Lin Chen, Hao Zhu, Qingqing Sun, Tianbao Zhang, David Wei Zhang
Publikováno v:
2D Materials. 5:015028
Wafer-level integration of 2D transition metal disulfide is the key factor for future large-scale integration of the continuously scaling-down devices, and has attracted great attention in recent years. Compared with other ultra-thin film growth meth