Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ye-Ram Kim"'
Autor:
Jae-Ho Hong, Eui-Young Jeong, Jeong-Soo Lee, Jun-Sik Yoon, Yoon-Ha Jeong, Ye-Ram Kim, Rock-Hyun Baek, Chang-Ki Baek
Publikováno v:
IEEE Transactions on Electron Devices. 62:3441-3444
In this brief, we systematically investigated the effects of fin pitch (FP) and fin height ( $H_{\textrm {fin}}$ ) on parasitic resistances and capacitances to achieve the best $RC$ delay, which is an adequate metric of the ac behavior of FinFETs, fo
Autor:
Rock-Hyun Baek, Chang-Ki Baek, Yoon-Ha Jeong, Jeong-Soo Lee, Ye-Ram Kim, Jae-Ho Hong, Jun-Sik Yoon, Eui-Young Jeong
Publikováno v:
IEEE Electron Device Letters. 36:994-996
DC/AC characteristics of Si bulk FinFETs including middle-of-line levels are precisely investigated using well-calibrated 3-D device simulations for system-on-chip applications. Scaling the fin widths down to 5 nm effectively enhances gate-to-channel
Autor:
Yoon-Ha Jeong, Sanghyun Lee, Ye-Ram Kim, Jeong-Soo Lee, Myung-Dong Ko, Hyun Chul Sagong, Chang-Ki Baek, Chan-Hoon Park, Chang Yong Kang, Eui-Young Jeong, Do-Young Choi, J.C. Lee, Chang-Woo Sohn
Publikováno v:
IEEE Transactions on Electron Devices. 60:1302-1309
In this paper, a simple but accurate model is presented to analyze source/drain (S/D) series resistance in trigate fin field-effect transistors, particularly on triangular or pentagonal rather than rectangular epitaxy. The model includes the contribu
Autor:
Ye-Ram Kim, Jae-Ho Hong, Jun-Sik Yoon, Eui-Young Jeong, Jeong-Soo Lee, Yoon-Ha Jeong, Sanghyun Lee
Publikováno v:
Japanese Journal of Applied Physics. 54:04DC06
Source/drain series resistances (Rsd) of n- and p-type double-gate fin field-effect transistors (FinFETs) were successfully extracted using the methods applicable to short channel devices. Rsd is decomposed into spreading, sheet, and contact resistan