Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Elizabeth von Hauff"'
Publikováno v:
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 87(1-4), 149-156. Elsevier
von Hauff, E, Dyakonov, V & Parisi, R 2005, ' Study of field effect mobility in PCBM films and P3HT : PCBM blends ', SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 87, no. 1-4, pp. 149-156 . https://doi.org/10.1016/j.solmat.2004.06.014
von Hauff, E, Dyakonov, V & Parisi, R 2005, ' Study of field effect mobility in PCBM films and P3HT : PCBM blends ', SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 87, no. 1-4, pp. 149-156 . https://doi.org/10.1016/j.solmat.2004.06.014
We report on field effect mobility measurements in methanofullerene [6,6]-phenyl C61C61-butyric acid methyl ester (PCBM) films and in blends of poly(3-hexylthiophene) (P3HT) and PCBM, identical to those used in polymer solar cells. Electron mobilitie
Publikováno v:
von Hauff, E, Johnen, F, Tunc, A V, Govor, L & Parisi, J 2010, ' Detailed investigation of the conducting channel in poly(3-hexylthiophene) field effect transistors ', Journal of Applied Physics, vol. 108, no. 6, 063709 . https://doi.org/10.1063/1.3488607
Journal of Applied Physics, 108(6):063709. American Institute of Physics Publising LLC
Journal of Applied Physics, 108(6):063709. American Institute of Physics Publising LLC
In this study, the conducting channel in poly(3-hexylthiophene) (P3HT) organic field effect transistors (OFETs) was investigated. The effect of varying the P3HT layer thickness on the OFET parameters was studied. The threshold voltage and the field e
Publikováno v:
Journal of Applied Physics, 100(7):073713. American Institute of Physics Publising LLC
von Hauff, E, Parisi, J & Dyakonov, V 2006, ' Investigations of electron injection in a methanofullerene thin film transistor ', Journal of Applied Physics, vol. 100, no. 7, 073713 . https://doi.org/10.1063/1.2352808
von Hauff, E, Parisi, J & Dyakonov, V 2006, ' Investigations of electron injection in a methanofullerene thin film transistor ', Journal of Applied Physics, vol. 100, no. 7, 073713 . https://doi.org/10.1063/1.2352808
In this study we investigate charge injection into a methanofullerene. The temperature and electric field dependent source-drain currents from contact limited [6,6]-phenyl C61-butyric acid methyl ester (PCBM) thin film transistors (TFTs) were analyze
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab20659691196296afaf1d041d03080f
https://research.vu.nl/en/publications/416f5711-07af-423e-a551-e3f44a8250ef
https://research.vu.nl/en/publications/416f5711-07af-423e-a551-e3f44a8250ef
Publikováno v:
von Hauff, E, Parisi, J & Dyakonov, V 2006, ' Investigations of the effects of tempering and composition dependence on charge carrier field effect mobilities in polymer and fullerene films and blends ', Journal of Applied Physics, vol. 100, no. 4, 043702 . https://doi.org/10.1063/1.2234806
Journal of Applied Physics, 100(4):043702. American Institute of Physics Publising LLC
Journal of Applied Physics, 100(4):043702. American Institute of Physics Publising LLC
In this study we report on field effect mobilities of charge carriers in materials used in polymer photovoltaics. The field effect mobilities of charge carriers in polymer and fullerene films and in various blend compositions were investigated for th
Publikováno v:
von Hauff, E, Parisi, J & Dyakonov, V 2006, ' Field effect measurements on charge carrier mobilities in various polymer-fullerene blend compositions ', Thin Solid Films, vol. 511-512, pp. 506-511 . https://doi.org/10.1016/j.tsf.2005.12.025
Thin Solid Films, 511-512, 506-511. Elsevier
Thin Solid Films, 511-512, 506-511. Elsevier
In this study we investigated materials typically used in polymer photovoltaics. Field effect measurements were performed in order to determine the hole mobilities in the conjugated polymer poly(3-hexylthiophene) (P3HT) and the electron mobilities in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e26ced4218f4a5623d7bc45a8a466e91
https://hdl.handle.net/1871.1/6a81b203-5c63-44fe-9032-b9e2f65191dd
https://hdl.handle.net/1871.1/6a81b203-5c63-44fe-9032-b9e2f65191dd
Publikováno v:
Scopus-Elsevier
von Hauff, E, Spethmann, N & Parisi, J 2008, ' A Gated Four Probe Technique for Field Effect Measurements on Disordered Organic Semiconductors ', Zeitschrift für Naturforschung. Section A: Journal of Physical Sciences, vol. 63, no. 9, pp. 591-595 .
Vrije Universiteit Amsterdam
Zeitschrift für Naturforschung. Section A: Journal of Physical Sciences, 63(9), 591-595. Verlag der Zeitschrift fur Naturforschung
von Hauff, E, Spethmann, N & Parisi, J 2008, ' A Gated Four Probe Technique for Field Effect Measurements on Disordered Organic Semiconductors ', Zeitschrift für Naturforschung. Section A: Journal of Physical Sciences, vol. 63, no. 9, pp. 591-595 .
Vrije Universiteit Amsterdam
Zeitschrift für Naturforschung. Section A: Journal of Physical Sciences, 63(9), 591-595. Verlag der Zeitschrift fur Naturforschung
A gated four probe measurement technique to isolate contact resistances in field effect measurements on disordered organic semiconductors was investigated. Organic field effect transistors (OFETs) were prepared with two additional electrodes in the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eadbb29afdebeec2eb07bdfb2c6ef901
http://www.scopus.com/inward/record.url?eid=2-s2.0-53249113364&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-53249113364&partnerID=MN8TOARS