Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Murali Narasimhan"'
Autor:
Frederick Wu, Zvi Lando, Murali Narasimhan, Mohan K. Bhan, Ramanujapuram A. Srinivas, Brian Metzger, Fusen E. Chen
Publikováno v:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V.
The TiCl4 based CVD-Ti process has been identified as the candidate of choice for the advanced contact metallization. A BKM wet clean recovery (WCR) procedure, involving extended chamber seasoning, has been developed for the CVD-Ti process. The new W
Autor:
Sunny Chiang, Jaim Nulman, Keith J. Hansen, Sesh Ramaswami, Murali Narasimhan, Murali Abburi, Vikram Pavate, Glen T. Mori, Daryl Restaino
Publikováno v:
SPIE Proceedings.
Increasing levels of metallization, shrinking device geometries, and stringent defect density requirements have led to a continuous focus in the semiconductor manufacturing community to reduce defects generated during metal deposition by PVD techniqu
Autor:
Sesh Ramaswami, Glen T. Mori, Daryl Restaino, Murali Abburi, Keith J. Hansen, Sunny Chiang, Vikram Pavate, Jaim Nulman, Murali Narasimhan
Publikováno v:
Multilevel Interconnect Technology.
Increasing levels of metallization, shrinking device geometries, and stringent defect density requirements have led to a continuous focus in the semiconductor manufacturing community to reduce defects generated during metal deposition by PVD techniqu