Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sihao, Xia"'
Publikováno v:
Journal of Colloid and Interface Science. 607:913-921
Two-dimensional (2D) semiconductors show novel electronic and optoelectronic applications due to their excellent performance. The van der Waals (vdW) heterostructures are also a new method for the design of low dimensional optoelectronic devices. How
Publikováno v:
Physics Letters A. 383:3018-3024
In this paper, we have investigated optoelectronic properties of two-dimensional GaN adsorbed with non-metal atoms: H, N and O based on first-principle. We find that adsorption of H, N and O atom on 2D GaN is achieved by chemisorption, and the most s
Publikováno v:
Superlattices and Microstructures. 118:160-169
In the X-ray photoelectron spectroscopy experiment, we observed that the valence band spectrum of the n-GaN (0001) surface appeared a bump near 1.9 eV after Ar etching and the N/Ga ratio became smaller, while the bump disappeared upon exposure to air
Publikováno v:
Optik. 127:8662-8669
In order to investigate the influence of vacancy defects (Ga atom vacancy, Al atom vacancy and N atom vacancy) on the electronic structure and optical properties of Ga 0.75 Al 0.25 N, models of Ga 0.75 Al 0.25 N, Ga 0.6875 Al 0.25 N, Ga 0.75 Al 0.187
Publikováno v:
Computational and Theoretical Chemistry. 1092:19-24
This paper explores the electronic structure and optical properties of GaN nanowires with N vacancy (VN-sur, VN-sub and VN-cor) through first-principles density-function calculation. The stability of GaN nanowires with N vacancy are deteriorated comp
Publikováno v:
Optical and Quantum Electronics. 48
To investigate the influences of Mg doping and different doping sites on the electronic structures and optoelectronic properties of GaN nanowires, models of GaN, GaN(Mg)–Sur, GaN(Mg)–Sub and GaN(Mg)–Cor are built. Based on first-principles calc
Publikováno v:
International Journal of Modern Physics B. 30:1650217
In order to investigate the influences of different Al constituents on Ga[Formula: see text]Al[Formula: see text]N nanowires, the formation energy, stability, band structure, densities of states and optical properties of Ga[Formula: see text]Al[Formu
Publikováno v:
Optik. 127:9236
Publikováno v:
International Journal of Modern Physics B. 30:1650136
This paper explores the properties of intrinsic gallium nitride (GaN) nanowires (NWs) in terms of formation energy, band structure, density of state (DOS) and optical properties with plane-wave ultrasoft pseudopotential method based on first-principl