Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Y. Kumagai, Tadahiro Ohmi, S. Sugawa, Rihito Kuroda, Akinobu Teramoto, T. Inatsuka, Tomoyuki Suwa
Publikováno v:
IEEE Transactions on Electron Devices. 58:3307-3313
Using the array test pattern, gate current through the tunnel oxide on the order of 10-16 A can be measured for about 1 000 000 transistors within 4 min. Because this test pattern can be fabricated by simple processes and its peripheral circuits are
Publikováno v:
Analog Integrated Circuits and Signal Processing. 21:173-191
Circuit architecture for parallel data processing directly carried out on the hardware have been developed based on a high-functionality transistor, neuron MOSFET (neuMOS or νMOS for short). In the νMOS data sorting circuit, multiple analog input d
Publikováno v:
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing. 45:495-503
A new architecture integrated circuit has been developed as a key element of a system that can real-time track the center of mass of an moving image on a two-dimensional (2-D) pixel array. The circuit has been implemented using a high-functionality t
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:913-922
A circuit technology for self-learning neural network hardware has been developed using a high-functionality device called Neuron MOS Transistor (/spl upsi/MOS) as a key circuit element. A /spl upsi/MOS can perform weighted summation of multiple inpu
Autor:
Tadahiro Ohmi, Tadashi Shibata
Publikováno v:
IEEE Transactions on Electron Devices. 40:570-576
Described are the fundamental design principles for binary-logic circuits using a highly functional device called the neuron MOS transistor ( nu MOS), a single MOS transistor simulating the function of biological neurons. To facilitate logic design e
Publikováno v:
2008 IEEE International Reliability Physics Symposium.
We propose a new test-element-group (TEG) in order to study anomalous stress-induced leakage current (SILC) of tunnel oxide, which is a problem for flash memory reliability. Using this TEG, gate current through the tunnel oxide in the order of 10-16
Autor:
Yoshio Nakamura, Seiji Hashimoto, Tadahiro Ohmi, Shigetoshi Sugawa, Mahito Shinohara, Shigeyuki Matsumoto, N. Tanaka, M. Morishita
Publikováno v:
IEEE Transactions on Electron Devices. 37:964-971
A bipolar imager with an amplification function in each pixel has been developed using BiCMOS technology. The imager, which stores photocarriers in the base regions of the bipolar transistor pixels, is called the base-stored image sensor (BASIS). BAS
Publikováno v:
Proceedings of Fifth International Conference on Microelectronics for Neural Networks.
Neuron MOS transistor (/spl upsi/MOS) mimicking the fundamental behavior of neurons at a very primitive device level has been applied to construct a real-time event recognition hardware. A neuron MOS associator searches for the most similar event in
Publikováno v:
Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.
This paper presents RAM technology that quantizes analog input data and stores it as multi-valued data for intelligent data processing. Moreover, data association and classification according to the degree of association can also be performed at the
Autor:
Tadashi Shibata, Tadahiro Ohmi
Publikováno v:
Proceedings of International Conference on Microelectronics.
We will propose the concept of a “four-terminal device” which functionally surpasses three-terminal devices like MOSFET's and bipolar transistors in the ability of controlling the current flowing through a device. The enhanced functionality at th