Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Rahul Mishra"'
Publikováno v:
IEEE Transactions on Sustainable Computing. 7:786-798
Autor:
Hideo Ohno, Hiroki Sato, Raghav Sharma, Hyunsoo Yang, Tung Ngo, Yong-Xin Guo, Shunsuke Fukami, Rahul Mishra
Publikováno v:
Nature Communications
Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
The mutual synchronization of spin-torque oscillators (STOs) is critical for communication, energy harvesting and neuromorphic applications. Short range magnetic coupling-based synchronization has spatial restrictions (few µm), whereas the long-rang
Publikováno v:
Physical Review Applied. 15
Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with spin-transfer torque devices. However, SOT memories are ar
Publikováno v:
IAS
Numerous promising features of Medium Voltage DC Distribution System (MVDC-DS) make it highly probable that it would be extensively integrated with the future AC power grid to enhance power availability. However, issues may arise during interconnecti
Autor:
Rahul Mishra, Alok Jain
Publikováno v:
2016 International Conference on Electrical Power and Energy Systems (ICEPES).
Conventional resources are replenished day by day and are very limited but the need of electricity is increasing day by day. So in the todays scenario, energy alternatives is in trend to use that not only fulfils the need of the residential consumers
Autor:
Yang Yang, Junjun Li, Robert J. Gauthier, Souvick Mitra, Kiran V. Chatty, Dimitris E. Ioannou, Rahul Mishra
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 11:118-125
The degradation of nMOSFETs induced by nondestructive electrostatic discharge-like (ESD-like) stress in a 32-nm bulk CMOS technology was studied using I- V characteristics and charge pumping measurements. The impact of stress on drain saturation curr
Publikováno v:
Solid-State Electronics. 54:357-361
A study on the electrostatic discharge (ESD) behaviors of silicide blocked (Sblk) n and p channel MOSFETs is presented for a state-of-the-art 65 nm SOI technology. It is observed that the charge in the floating body SOI MOSFETs helps to improve their
Publikováno v:
International Journal of Nano Devices, Sensors and Systems (IJ-Nano). 1
In recent past extensive simulation work on Tunnel Field Effect Transistors (TFETs) has already been done. However this is limited to device performance analysis. Evaluation of circuit performance is a topic that is very little touched. This is due t
Autor:
Bahniman Ghosh, Rahul Mishra
In recent part extensive simulation work has already been done on TFETs. However this is limited to device performance analysis. Evaluation of circuit performance is a topic that is very little touched. This is due to the non availability of compact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18498df9f8e1859702d8be7b7a1bb1a8
Autor:
Dimitris E. Ioannou, Rahul Mishra, Kiran V. Chatty, Yang Yang, James P. Di Sarro, Souvick Mitra, Robert J. Gauthier, Junjun Li
Publikováno v:
2010 IEEE International Reliability Physics Symposium.
Catastrophic gate oxide breakdown of MOSFETs with high-k gate was characterized under ESD-like pulsed stress. It was found that the excessive gate current after gate oxide failure may result in a loss of gate contact and form a resistive path between