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pro vyhledávání: '"Peter Beno"'
Publikováno v:
Solid-State Electronics. 52:892-898
High-voltage power MOSFETs have been widely used in switching mode power supply circuits as output drivers for industrial and automotive electronic control systems. However, as the device size is reduced, the energy handling capability is becoming a
Publikováno v:
2008 International Conference on Advanced Semiconductor Devices and Microsystems.
The analysis of the ESD protection devices supported by the advanced 2-D and 3-D mixed mode electro-thermal device and circuit simulation is presented. The influence of structure geometry on the electrical properties of ESD devices is studied. The op
Publikováno v:
2006 International Conference on Advanced Semiconductor Devices and Microsystems.
The influence of geometrical dimensions on the properties of power DMOSFET's has been studied by 3-D numerical modeling and simulation. The results of 3-D simulation provide a very effective way for the identification of failure mechanism and locatio