Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Tadahiro Ohmi, Yuki Kumagai, Tomoyuki Suwa, Rihito Kuroda, T. Inatsuka, Akinobu Teramoto, Shigetoshi Sugawa
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 26:288-295
We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precisio
Autor:
Y. Kumagai, Tadahiro Ohmi, S. Sugawa, Rihito Kuroda, Akinobu Teramoto, T. Inatsuka, Tomoyuki Suwa
Publikováno v:
IEEE Transactions on Electron Devices. 58:3307-3313
Using the array test pattern, gate current through the tunnel oxide on the order of 10-16 A can be measured for about 1 000 000 transistors within 4 min. Because this test pattern can be fabricated by simple processes and its peripheral circuits are
Publikováno v:
IEEE Transactions on Electron Devices. 57:1597-1607
A study of the impact of the channel direction over the effective mobility and the 1/f noise in MOSFETs fabricated on (100) and (110) silicon-oriented wafers finding its outcome in the fabrication of future nonplanar device structures has been done.
Publikováno v:
Solid-State Electronics. 54:420-426
The paper deals with the investigation of the hole mobility in p-channel MOS transistors fabricated on (1 1 0) oriented silicon wafers. At first, we showed that the conventional methods used to extract the conduction parameters such as the low field
Publikováno v:
IEEE Transactions on Electron Devices. 54:1471-1477
Current silicon technologies are now facing very severe standstill, i.e., the operation speed is strictly limited at a clock rate of about 3.8 GHz due to the limitation of the thinning of the gate insulator film thickness because of its large amount
Publikováno v:
AIP Conference Proceedings 19th International Conference on NOISE AND FLUCTUATIONS-ICNF2007. 922:43-46
In this paper we present the study of 1/f noise in SOI n‐ and p‐MOSFET fabricated on Si(100) and Si(110) oriented wafers. A comparison of noise performances are first presented, then the impact of the in‐plane channel direction on the low frequ
Publikováno v:
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing. 45:495-503
A new architecture integrated circuit has been developed as a key element of a system that can real-time track the center of mass of an moving image on a two-dimensional (2-D) pixel array. The circuit has been implemented using a high-functionality t
Publikováno v:
IEEE Transactions on Electron Devices. 44:1903-1907
The threshold voltages of thin-film fully-depleted silicon-on-insulator (FDSOI) nMOS and pMOS have been controlled by employing tantalum (Ta) as the gate materials. Ta-gate FDSOI MOSFET's have excellent threshold voltage control for 1.0 V application
Autor:
Tadahiro Ohmi, Tadashi Shibata
Publikováno v:
Journal of Robotics and Mechatronics. 8:508-515
The primary objective of this article is not to present integrated circuit implementation of neural networks in the sense that neurophysiological models are constructed in electronic circuits, but to describe new-architecture intelligent electronic c
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:913-922
A circuit technology for self-learning neural network hardware has been developed using a high-functionality device called Neuron MOS Transistor (/spl upsi/MOS) as a key circuit element. A /spl upsi/MOS can perform weighted summation of multiple inpu