Zobrazeno 1 - 10
of 86
pro vyhledávání: '"Youguang Zhang"'
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 42:1463-1476
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 13:7-20
Autor:
Jinkai Wang, Yining Bai, Hongyu Wang, Zuolei Hao, Guanda Wang, Kun Zhang, Youguang Zhang, Weifeng Lv, Yue Zhang
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 69:4535-4545
Autor:
Zhizhong Zhang, Jinyi Sun, Zhenyi Zheng, Kelian Lin, Kun Zhang, Jinkai Wang, Youguang Zhang, Weisheng Zhao, Yue Zhang
Publikováno v:
IEEE Electron Device Letters. 43:1567-1570
Publikováno v:
IEEE Transactions on Electron Devices. 69:3455-3461
Publikováno v:
IEEE Transactions on Electron Devices. 69:1677-1682
Autor:
Bi Wang, Min Wang, Hongchao Zhang, Zhaohao Wang, Yudong Zhuo, Xiangyue Ma, Kaihua Cao, Liang Wang, Yuanfu Zhao, Tianqi Wang, Chaoming Liu, Hongqiang Zhang, Youguang Zhang, Jun Wang, Weisheng Zhao
Publikováno v:
IEEE Transactions on Nuclear Science. 69:43-49
Autor:
Youguang Zhang, Yining Bai, Guanda Wang, Kun Zhang, Lei Chen, Georgios Ch. Sirakoulis, Yue Zhang, Zhenyi Zheng, Chenyu Lian, Jinkai Wang, Zhizhong Zhang
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 68:1193-1205
The data transfer bottleneck in Von Neumann architecture owing to the separation between processor and memory hinders the development of high-performance computing. The computing in memory (CIM) concept is widely considered as a promising solution fo
Publikováno v:
IEEE Transactions on Magnetics. 57:1-4
In the era of big data, the memory wall between the processor and the memory as well as leakage current have become major bottlenecks of the traditional CMOS-based Von-Neumann computer architecture. Computing-in-memory (CiM) based on non-volatile mem
Autor:
Youguang Zhang, Ying Wang, Chao Wang, Deming Zhang, Bi Wu, Dijun Liu, Zhaohao Wang, Xiaobo Sharon Hu
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 67:4660-4669
Continued scaling of Complementary Metal Oxide Semiconductor (CMOS) integrated circuit technology is slowing down due to physical limitations, while the static power of CMOS based memory is increasing as the transistors shrink. As an alternative memo