Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yi, Xiaoyan"'
Light Extraction Efficiency Improvement by Curved GaN Sidewalls in InGaN-Based Light-Emitting Diodes
Publikováno v:
IEEE Photonics Technology Letters. 24:243-245
Polygonal GaN sidewalls are fabricated using a laser scriber and a wet-etching process. After a two-step laser scribing process and a hot acid etching treatment, curved GaN sidewalls are formed consisting of the chemically stable (10-1-2) crystallogr
Publikováno v:
Journal of Semiconductors. 37:061001
Due to their low power consumption, long lifetime and high efficiency, nitrides based white light-emitting-diodes (LEDs) have long been considered to be a promising technology for next generation illumination. In this work, we provide a brief review
Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers
Publikováno v:
Journal of Semiconductors. 36:054006
The characteristics of nitride-based blue light-emitting diodes (LEDs) with AlGaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells (QWs), the energy band diagrams, the electrostatic fields, and the
Autor:
Ji Xiaoli, Liu Na, Guo Enqing, Liang Meng, Yi Xiaoyan, Wang Junxi, Si Zhao, Li Jinmin, Liu Zhiqiang, Feng Xiang-Xu, Lu Hongxi, Wei Xuecheng, Zhang Ning
Publikováno v:
Journal of Semiconductors. 35:024010
The advantages of the p-AlInGaN/GaN superlattices' (SLs) structure as an electron blocking layer (EBL) for InGaN blue light-emitting diodes (LEDs) were studied by experiment and APSYS simulation. Electroluminescence (EL) measurement results show that
Autor:
Yao Ran, Li Jing, Wang Bing, Yi Xiaoyan, Deng Yuanming, Wang Guohong, Li Panpan, Li Hongjian, Li Jinmin, Liang Meng, Li Zhicong
Publikováno v:
Journal of Semiconductors. 32:114007
Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes (LEDs), the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared.
Optical and electrical characteristics of GaN vertical light emitting diode with current block layer
Publikováno v:
Journal of Semiconductors. 32:064007
A GaN vertical light emitting diode (LED) with a current block layer (CBL) was investigated. Vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated. Optical and electrical tests were carried out. The
Publikováno v:
Journal of Semiconductors. 32:024009
Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes (VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been co
Autor:
Yang Hua, Duan Yao, Li Zhicong, Wang Guohong, Ruan Jun, Zeng Yiping, Wang Xiaofeng, Yi Xiaoyan
Publikováno v:
Journal of Semiconductors. 30:094002
Gallium nitride (GaN) based light emitting diodes (LEDs) with a thick and high quality ZnO film as a current spreading layer grown by metal-source vapor phase epitaxy (MVPE) are fabricated successfully. Compared with GaN-based LEDs employing a Ni/Au