Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Chun-Yu Lin"'
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 69:2016-2020
Publikováno v:
IEEE Electron Device Letters. 43:252-255
Autor:
J.-F. Wang, H. Liang, C. W. Liu, K.-Y. Hsiang, Tuo-Hung Hou, S.-H. Chiang, Z.-F. Lou, S.-H. Chang, Chun-Yu Lin, Min-Hung Lee, F.-C. Hsieh, C.-Y. Liao, J.-H. Liu
Publikováno v:
IEEE Electron Device Letters. 42:1464-1467
The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of $> 100\times $ , a TER (tunneling electroresistance) of $> 50\times $ , multilevel states, $>
Autor:
K.-Y. Hsiang, T.-C. Chen, C.-Y. Liao, Chun-Yu Lin, F.-C. Hsieh, J.-H. Liu, C.-F. Lou, S.-H. Chiang, Chang-Yun Chang, S.-H. Chang, Min-Hung Lee
Publikováno v:
IEEE Electron Device Letters. 42:617-620
A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as $\vert {V}_{P/{E}}\vert = {5}$ V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to
Publikováno v:
IEEE Transactions on Electron Devices. 67:2725-2731
The FinFET architecture has widely been used in the digital circuit application, due to the good short channel effect control and driving current boost. However, the worse thermal dispassion and smaller effective silicon volume would cause the signif
Publikováno v:
IEEE Transactions on Electron Devices. 67:33-39
A low-noise amplifier (LNA) is the input part of a radio frequency (RF) transceiver, which is vulnerable to electrostatic discharge (ESD). When ESD events occur, they may change the original characteristics of the LNA, such as gain decrease and noise
Publikováno v:
IEEE Microwave and Wireless Components Letters. 30:58-61
A compact electrostatic discharge (ESD) protection cell is proposed for multi-band millimeter-wave (MMW) circuits in nanoscale CMOS technology. The proposed ESD protection cell consists of a silicon-controlled rectifier (SCR) and a diode as the main
Autor:
Chun-Yu Lin, Guan-Yi Li
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 19:782-790
The on-chip electrostatic discharge (ESD) protection device for radio-frequency (RF) power amplifier (PA) with open-drain structure is studied in this work. The conventional ESD protection device of stacked diodes and the proposed ESD protection devi
Autor:
Yu-Hsuan Lai, Chun-Yu Lin
Publikováno v:
IEEE Transactions on Electron Devices. 66:4107-4110
Electrostatic discharge (ESD) protection design is needed for integrated circuits; however, the ESD protection devices near the I/O pad may cause negative impacts on the high-frequency performance. To achieve both excellent ESD robustness and good br
Publikováno v:
IEEE Transactions on Electron Devices. 65:5267-5274
On-chip electrostatic discharge (ESD) protection device with large dimension can sustain high-ESD current, but the parasitic capacitance of the ESD protection device will increase the difficulty of impedance matching and degrade the bandwidth for bro