Zobrazeno 1 - 10
of 135
pro vyhledávání: '"Cheng Yan"'
Autor:
Siao-Cheng Yan, Chen-Han Wu, Chong-Jhe Sun, Xin-Chan Zhong, Chih-Siang Chang, Hao-Kai Peng, Yung-Hsien Wu, Yung-Chun Wu
Publikováno v:
IEEE Electron Device Letters. 44:44-47
Publikováno v:
IET Science, Measurement & Technology. 17:93-104
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 29:1828-1837
Publikováno v:
IET Science, Measurement & Technology. 16:512-522
Publikováno v:
Nano Research.
Publikováno v:
Micromachines; Volume 14; Issue 5; Pages: 920
The structure used in this study is as follows: substrate/PMMA/ZnS/Ag/MoO3/NPB/Alq3/LiF/Al. Here, PMMA serves as the surface flattening layer, ZnS/Ag/MoO3 as the anode, NPB as the hole injection layer, Alq3 as the emitting layer, LiF as the electron
Autor:
Cheng Yan, Jing Liu, Xue Yang, Songqi Cai, Xiuliang Lu, Chun Yang, Mengsu Zeng, Guofeng Zhou, Min Ji
Publikováno v:
Journal of X-Ray Science and Technology. 30:389-398
BACKGROUND: Due to the limited temporal resolution and cardiac motion, coronary computed tomography angiography (CCTA) exam is one of the most challenging CT protocols which may require operating radiologist to apply additional phase adjustment or mo
Publikováno v:
IEEE Transactions on Multimedia. 24:1665-1677
Person Re-IDentification (ReID) aims at re-identifying persons from different viewpoints across multiple cameras. Capturing the fine-grained appearance differences is often the key to accurate person ReID, because many identities can be differentiate
Autor:
Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society. 10:408-412
Autor:
Shan-Wen Lin, Guang-Li Luo, Chien-Ting Wu, Yung-Chun Wu, Siao-Cheng Yan, Fu-Ju Hou, H.-C. Chang, Chong-Jhe Sun, Yi-Wen Lin, Yu-Hsien Huang
Publikováno v:
IEEE Electron Device Letters. 42:1727-1730
We propose that the use of tightly stacked three-dimensional (3D) diamond-shaped Ge nanowire (NW) gate-all-around field-effect transistor (Ge-NW GAAFET) is a feasible approach to continuous scaling. The proposed devices with the Al2O3 dielectric exhi