Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Denis V"'
Autor:
Kirill A. Bokai, Matthias Muntwiler, Frederik Schiller, Lada V. Yashina, Anna A. Makarova, J. Enrique Ortega, Artem V. Tarasov, Oleg Yu. Vilkov, Dmitry Yu. Usachov, Denis V. Vyalikh
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
Graphene growth and doping are well studied on flat surfaces of various materials. To further advance the technological implementation of graphene-based systems, fundamental studies need more appropriate model templates, whose surfaces would mimic su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b632c4e801e95b1f5a4bbc3ed912925
http://hdl.handle.net/10261/258763
http://hdl.handle.net/10261/258763
Autor:
Yuri N. Palyanov, Denis V. Nechaev, Igor N. Kupriyanov, Alexander F. Khohkhryakov, Yuri M. Borzdov
Publikováno v:
Scientific Reports
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
The combination of the unique properties of diamond and the prospects for its high-technology applications urges the search for new solvents–catalysts for the synthesis of diamonds with rare and unusual properties. Here we report the synthesis of d
Autor:
Artem G. Rybkin, Anna V. Erofeevskaya, V. K. Adamchuk, Arthur Ernst, A. E. Petukhov, Vladimir Yu. Voroshnin, Elmar Yu. Kataev, Oleg Yu. Vilkov, Evgueni V. Chulkov, Alexander Fedorov, Dmitry Yu. Usachov, Denis V. Vyalikh, Clemens Laubschat, Ilya I. Ogorodnikov, Lada V. Yashina, M. V. Kuznetsov, Mikhail M. Otrokov
Publikováno v:
Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reproducible and processing compatible manner are very li
Autor:
Alberto Verdini, Artem V. Tarasov, Luca Floreano, Fumihiko Matsui, Viktor O. Shevelev, Clemens Laubschat, Dmitry Yu. Usachov, Denis V. Vyalikh, Oleg Yu. Vilkov, Albano Cossaro, Matthias Muntwiler, Kirill A. Bokai, Lada V. Yashina, M. V. Kuznetsov
Publikováno v:
2D materials 6 (2019). doi:10.1088/2053-1583/ab3ea8
info:cnr-pdr/source/autori:Usachov, Dmitry Yu; Tarasov, Artem V.; Matsui, Fumihiko; Muntwiler, Matthias; Bokai, Kirill A.; Shevelev, Viktor O.; Vilkov, Oleg Yu; Kuznetsov, Mikhail V.; Yashina, Lada V.; Laubschat, Clemens; Cossaro, Albano; Floreano, Luca; Verdini, Alberto; Vyalikh, Denis V./titolo:Decoding the structure of interfaces and impurities in 2D materials by photoelectron holography/doi:10.1088%2F2053-1583%2Fab3ea8/rivista:2D materials/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:6
info:cnr-pdr/source/autori:Usachov, Dmitry Yu; Tarasov, Artem V.; Matsui, Fumihiko; Muntwiler, Matthias; Bokai, Kirill A.; Shevelev, Viktor O.; Vilkov, Oleg Yu; Kuznetsov, Mikhail V.; Yashina, Lada V.; Laubschat, Clemens; Cossaro, Albano; Floreano, Luca; Verdini, Alberto; Vyalikh, Denis V./titolo:Decoding the structure of interfaces and impurities in 2D materials by photoelectron holography/doi:10.1088%2F2053-1583%2Fab3ea8/rivista:2D materials/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:6
The properties of atomically thin materials essentially depend on their structures, including impurities, defects and interfaces with underlying substrates. Thus, the detailed structural information is relevant for creation of 2D materials with desir
Autor:
Alexander V. Fedorov, Kirill A. Bokai, Oleg Yu. Vilkov, Elmar Yu. Kataev, Eckart Rühl, Lada V. Yashina, Viktor O. Shevelev, Dmitry Yu. Usachov, Denis V. Vyalikh, Clemens Laubschat, Dmitry Marchenko
Publikováno v:
Digital.CSIC: Repositorio Institucional del CSIC
Consejo Superior de Investigaciones Científicas (CSIC)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Consejo Superior de Investigaciones Científicas (CSIC)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Recrystallization of bulk materials is a well-known phenomenon, which is widely used in commercial manufacturing. However, for low-dimensional materials like graphene, this process still remains an unresolved puzzle. Thus, the understanding of the un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb3561445d340353c928e46924fba2ad
Autor:
Lada V. Yashina, Evgueni V. Chulkov, Clemens Laubschat, Dmitry Yu. Usachov, Denis V. Vyalikh, Boris V. Senkovskiy, Andrés Arnau, Mikhail M. Otrokov, Oleg Yu. Vilkov, A. V. Fedorov, V. K. Adamchuk, Artem G. Rybkin, A. E. Petukhov, Mani Farjam
Publikováno v:
ACS Nano. 2015. Vol. 9. P. 7314-7322
Digital.CSIC. Repositorio Institucional del CSIC
instname
Digital.CSIC. Repositorio Institucional del CSIC
instname
Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an efficient method based on chemical vapor deposition
Autor:
A. S. Vopilov, Alexander Fedorov, V. K. Adamchuk, O. Yu. Vilkov, D. Yu. Usachov, A. V. Erofeevskaya, Denis V. Vyalikh
Publikováno v:
Physics of the Solid State. 57:1040-1047
The intercalation of silicon under graphene on the Co(0001) surface, which is accompanied by the formation of a silicon solid solution in cobalt and by the formation of a surface crystalline Co2Si phase, has been investigated using photoelectron spec
Autor:
N. A. Kiselev, A. A. Eliseev, Anna A. Makarova, I. I. Verbitskiy, V. G. Zhigalina, A. S. Kumskov, Denis V. Vyalikh, Alexander L. Vasiliev, N. S. Falaleev
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
The paper reports the relationship between single-walled carbon nanotube (SWNT) doping and capsulate crystal structure in RbxAg1−xI@SWNT composites. The structures of one dimensional (1D) RbI, AgI and RbAg4I5 crystals inside single-walled carbon na
Autor:
Boris V. Senkovskiy, Alexander Grüneis, V. K. Adamchuk, Alexander Fedorov, Oleg Yu. Vilkov, Nikolay I. Verbitskiy, Lada V. Yashina, Clemens Laubschat, Andrey A. Volykhov, Dmitry Yu. Usachov, Denis V. Vyalikh, Mani Farjam
Publikováno v:
Nano Letters. 14:4982-4988
Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material stil
Autor:
V. K. Adamchuk, Boris V. Andryushechkin, Alexander Fedorov, Denis V. Vyalikh, Boris V. Senkovskiy, D. Yu. Usachov, O. Yu. Vilkov
Publikováno v:
Physics of the Solid State. 55:1325-1332
The crystalline and electronic structure of nitrogen-doped graphene (N-graphene) has been studied by photoelectron spectroscopy and scanning tunneling microscopy. Synthesis of N-graphene from triazine molecules on Ni(111) surface results in incorpora