Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Justin Norman"'
Autor:
Matteo Buffolo, Enrico Zanoni, Gaudenzio Meneghesso, Lorenzo Rovere, Daehwan Jung, Carlo De Santi, John E. Bowers, Matteo Meneghini, Justin Norman, Robert W. Herrick
Publikováno v:
IEEE Journal of Quantum Electronics. 57:1-8
This paper investigates the impact of dislocation density and active layer structure on the degradation mechanisms of 1.3 $\mu \text{m}$ InAs Quantum Dot (QD) lasers for silicon photonics. We analyzed the optical behavior of two sets of samples, havi
Autor:
Carlo De Santi, Justin Norman, Matteo Meneghini, Matteo Buffolo, Lorenzo Rovere, Gaudenzio Meneghesso, Robert W. Herrick, John E. Bowers, Enrico Zanoni
This paper reports on the impact of the quality of the epitaxial structure of InAs Quantum Dot (QD) lasers grown on silicon substrates on lifetime. To this aim, a series of current step-stress and constant-current aging experiments were carried out o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7b703e932b05940d90790afc15e223d
http://hdl.handle.net/11577/3412584
http://hdl.handle.net/11577/3412584
Autor:
Mike Salmon, Daehwan Jung, Robert W. Herrick, Eammon Hughes, John E. Bowers, Justin Norman, Jennifer Selvidge, Kunal Mukherjee
Publikováno v:
2019 IEEE Photonics Conference (IPC).
Using correlated electron microscopy techniques, we characterize optoelectronic and structural properties of dislocation in InAs quantum dots (QD) structures. Results indicate that although dislocations significantly affect QD luminescence, the rate
Autor:
Kunal Mukherjee, John E. Bowers, Robert W. Herrick, Zeyu Zhang, Justin Norman, Mario Dumont, Chen Shang, Andrew M. Netherton, Michael Kennedy, Jennifer Selvidge, Eamonn T. Hughes
Publikováno v:
Applied Physics Letters. 118:192101
We describe the effectiveness of filter layers, which displace misfit dislocation (MD) formation away from the active region, in improving high temperature reliability of epitaxially integrated InAs quantum dot lasers on on-axis silicon substrates. W
Autor:
Kunal Mukherjee, Mike Salmon, Jennifer Selvidge, Robert W. Herrick, Daehwan Jung, Aidan A. Taylor, Alan Y. Liu, Justin Norman, John E. Bowers
Publikováno v:
Journal of Applied Physics. 128:025703
We analyze the structure of dislocations in electrically aged InAs quantum dot (QD) lasers on silicon to understand gradual device degradation. We find that misfit dislocations lengthen due to carrier injection, experiencing a combination of recombin
Autor:
Jennifer Selvidge, Eamonn T. Hughes, Kunal Mukherjee, John E. Bowers, Justin Norman, Robert W. Herrick, Mike Salmon
Publikováno v:
Applied Physics Letters. 115:131102
We study the impact of misfit dislocations on the luminescence from InAs quantum dots (QDs) grown on Si substrates. Electron channeling contrast imaging is used together with cathodoluminescence mapping to locate misfit dislocations and characterize