Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Bastien Bonef"'
Autor:
Abdullah S. Almogbel, Feng Wu, Bastien Bonef, James S. Speck, Michael Iza, Shuji Nakamura, Burhan K. Saifaddin, Steven P. DenBaars, Christian J. Zollner
Publikováno v:
ACS Photonics. 7:554-561
The disinfection industry would greatly benefit from efficient, robust, high-power deep-ultraviolet light-emitting diodes (UV–C LEDs). However, the performance of UV–C AlGaN LEDs is limited by poor...
Autor:
Bastien Bonef, Matthew S. Wong, Joown Choi, Feng Wu, Jie Song, James S. Speck, Michel Khoury, Panpan Li, Tom Mates, Steven P. DenBaars, Shuji Nakamura, Haojun Zhang, Hongjian Li
Publikováno v:
Optics express. 28(12)
We demonstrate InGaN-based semipolar 560 nm micro-light-emitting diodes with 2.5% EQE on high-quality and low-defect-density (20-21) GaN templates grown on scalable and low-cost sapphire substrates. Through transmission electron microscopy observatio
Autor:
Bastien Bonef, Daniel Cohen, James S. Speck, Philippe De Mierry, Matthew S. Wong, Feng Wu, Shuji Nakamura, Philippe Vennéguès, Haojun Zhang, Michel Khoury, Steven P. DenBaars, Hongjian Li
Publikováno v:
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2019, ⟨10.1021/acsami.9b17525⟩
ACS Applied Materials & Interfaces, 2019, ⟨10.1021/acsami.9b17525⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2019, ⟨10.1021/acsami.9b17525⟩
ACS Applied Materials & Interfaces, 2019, ⟨10.1021/acsami.9b17525⟩
The last two decades have shown an increasing need for GaN-based laser diodes (LDs), which are currently only grown on bulk GaN substrates, which remain to date very expensive and/or only available in small sizes. The ever growing laser market will e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd3a9e2d4d8d4e13080705ed61331aa7
https://hal.archives-ouvertes.fr/hal-02405108
https://hal.archives-ouvertes.fr/hal-02405108
Autor:
Junjie Kang, Hongjian Li, Steven P. DenBaars, Michel Khoury, Panpan Li, Bastien Bonef, Shuji Nakamura, Guillaume Lheureux
Publikováno v:
Superlattices and Microstructures. 113:684-689
We investigate carrier localization effect and recombination dynamics of 530 nm InGaN green light-emitting diodes (LEDs) using temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) methods. Two distinct emission pe
Publikováno v:
Semiconductor Science and Technology. 35:125026
Tunnel junctions (TJs) offer alternative designs and promise in some cases improved performances for nitride-based light-emitting diode (LEDs) and laser diodes (LDs) and are widely used in academic studies. However, the voltage penalty of the LEDs an
Publikováno v:
Scripta Materialia
Scripta Materialia, Elsevier, 2018, 148, pp.75-81. ⟨10.1016/j.scriptamat.2016.12.034⟩
Scripta Materialia, 2018, 148, pp.75-81. ⟨10.1016/j.scriptamat.2016.12.034⟩
Scripta Materialia, Elsevier, 2018, 148, pp.75-81. ⟨10.1016/j.scriptamat.2016.12.034⟩
Scripta Materialia, 2018, 148, pp.75-81. ⟨10.1016/j.scriptamat.2016.12.034⟩
International audience; Atom probe tomography (APT) has emerged as a valuable tool in the study of nitride semiconductors, despite the challenges involved in achieving controlled field evaporation. In optoelectronics, it has provided insights into th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4275480ebe615beb5a2a6842fac991ba
https://hal.archives-ouvertes.fr/hal-01765932
https://hal.archives-ouvertes.fr/hal-01765932
Autor:
James S. Speck, Abdullah I. Alhassan, Steven P. DenBaars, Asad J. Mughal, Michel Khoury, Bastien Bonef, Ezzah Azimah, Hongjian Li, Philippe De Mierry, M. E. A. Samsudin, Shuji Nakamura
Publikováno v:
ACS applied materialsinterfaces. 9(41)
We demonstrate efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes (LEDs) with In0.03Ga0.97N barriers on low defect density (11-22) GaN/patterned sapphire templates. The In0.03Ga0.97N barriers were clearly identified, and no I
Autor:
Michel Khoury, James S. Speck, Bastien Bonef, Steven P. DenBaars, Leah Y. Kuritzky, Asad J. Mughal, Hongjian Li, Shuji Nakamura
Publikováno v:
Applied Physics Express. 11:036501
Semipolar InGaN 432 nm light-emitting diodes were demonstrated on semipolar GaN templates grown on patterned sapphire. Packaged devices exhibited a light output power of 4.7 mW at 100 A/cm2 and a peak external quantum efficiency of 1.3%. Atom probe t