Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yu-Chiang Chao"'
Autor:
Huai Ren Tsai, Che Yu Chang, Yu Chiang Chao, Yu Chi Huang, Ning Yi Chang, Zhi Chao Zhang, Wei Li Hong
Publikováno v:
Advanced Materials. 28:8029-8036
Lead-free perovskite infrared light-emitting diodes are achieved by using a halide perovskite CsSnI3 as an emissive layer. The film shows compact micrometer-sized grains with only a few pinholes and cracks at the grain boundaries. The device exhibits
Publikováno v:
RSC Adv.. 4:30881-30886
In this study, a wet chemical method of etching indium-tin-oxide (ITO) nanorods from commercially available ITO-coated glass is proposed and its applicability to polymer solar cells (PSCs) is validated. The ITO nanorods can be fabricated within a few
Publikováno v:
Organic Electronics. 12:78-82
The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10 5 cm 2 /Vs to 10 3 cm 2 /Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated
Publikováno v:
Organic Electronics. 9:310-316
We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by
Autor:
Hsiao-Wen Zan, Shu-Ling Jiang, Hsin-Fei Meng, Chun-Ming Chiang, Ming-Che Ku, Chun Yu Chen, Wu-Wei Tsai, Yu Chiang Chao
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
A 1-V solution-processed polymer vertical transistor with on/off current ratio higher than 2×104 is firstly demonstrated. The channel length is 200 nm. A new structure is used to perform reliable leakage control. Significant impacts of thin film mor
Publikováno v:
Applied Physics Letters. 106:153301
Vertical organic transistors withstanding high voltage bias were realized with an insulating silicon monoxide layer obliquely deposited on both the surface of the base electrode and sidewalls of the vertically oriented cylindrical nanopores. No notic
Autor:
Ming Che Ku, Hsiao-Wen Zan, Sheng-fu Horng, Yu Chiang Chao, Hsin-Fei Meng, Hung Kuo Tsai, Wu-Wei Tsai
Publikováno v:
Applied Physics Letters. 97:223307
We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3×105 at a low operation voltage of 1.5 V by using high quality insulators both abo
Publikováno v:
Applied Physics Letters. 92:093310
Vertical polymer hot-carrier transistor using the low bandgap material poly(3-hexylthiophene) as both the emitter and the collector are studied. The common emitter current gain is shown to depend on the LiF thickness and the emitter thickness, with m