Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Martin Albrecht"'
Autor:
Ta-Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Klaus Irmscher, Natasha Dropka, Jana Rehm, Thi Thuy Vi Tran, Wolfram Miller, Palvan Seyidov, Martin Albrecht, Andreas Popp
Publikováno v:
Crystals, Vol 12, Iss 8, p 8 (2022)
Crystals; Volume 12; Issue 1; Pages: 8
Crystals; Volume 12; Issue 1; Pages: 8
In this work, we train a hybrid deep-learning model (fDNN, Forest Deep Neural Network) to predict the doping level measured from the Hall Effect measurement at room temperature and to investigate the doping behavior of Si dopant in both (100) and (01
Autor:
Kookrin Char, Wahib Aggoune, Martina Zupancic, Claudia Draxl, Toni Markurt, Martin Albrecht, Youjung Kim, Young Mo Kim
Publikováno v:
Physical Review Materials. 4
Epitaxial perovskite oxide interfaces with different symmetry of the epitaxial layers have attracted considerable attention due to the emergence of novel behaviors and phenomena. In this paper, we show by aberration-corrected transmission electron mi
Autor:
C. Wouters, Toni Markurt, Matthias Scheffler, A. Hassa, Marius Grundmann, H. von Wenckstern, Luca M. Ghiringhelli, Christopher Sutton, Martin Albrecht, Robert Schewski
Publikováno v:
Physical Review Materials. 4
We investigate the phase diagram of the heterostructural solid solution ${({\mathrm{In}}_{x}{\mathrm{Ga}}_{1\text{\ensuremath{-}}x})}_{2}{\mathrm{O}}_{3}$ both computationally, by combining cluster expansion and density functional theory, and experim
Autor:
Mariia Anikeeva, Marcin Siekacz, Tobias Schulz, Martin Albrecht, Toni Markurt, Liverios Lymperakis, P. Wolny
Publikováno v:
Physical Review Materials. 4
The incorporation of indium in GaN (0001) surfaces in dependence of strain is investigated by combining molecular-beam epitaxy (MBE) growth, quantitative transmission electron microscopy, and density-functional theory (DFT) calculations. Growth exper
Autor:
Claudia Draxl, G. Wagner, Tobias Schulz, Martin Schmidbauer, Matthias Scheffler, S. Bin Anooz, Zbigniew Galazka, R. Grüneberg, C. Wouters, Robert Schewski, Klaus Irmscher, Andreas Popp, K. Lion, Martin Albrecht, Sergey V. Levchenko, Andreas Fiedler
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022515-022515-7 (2019)
APL Materials
APL Materials
We present a systematic study on the influence of the miscut orientation on structural and electronic properties in the homoepitaxial growth on off-oriented β-Ga2yO3 (100) substrates by metalorganic chemical vapour phase epitaxy. Layers grown on (10
Autor:
Stephen Faulkner, Jonathan A. Kitchen, Thorfinnur Gunnlaugsson, Dawn E. Barry, Martin Albrecht
The incorporation of chiral amphiphilic lanthanide-directed self-assembled Nd(III) complexes (Nd.13 and Nd.23) into stable Langmuir monolayers, and the subsequent Langmuir–Blodgett film formation of these, is described. The photophysical properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d67da2178ea3d8191a41158e2639e52
https://doi.org/10.1021/la402274s
https://doi.org/10.1021/la402274s
Autor:
Detlef Klimm, Rainer Bertram, Steffen Ganschow, Klaus Irmscher, Martin Albrecht, Zbigniew Galazka, Mike Pietsch, Reinhard Uecker, Mario Brützam, Roberto Fornari
Publikováno v:
Crystal Research and Technology. 45:1229-1236
Autor:
Grzegorz Nowak, Jan L. Weyher, Martin Albrecht, S. Porowski, Horst P. Strunk, Tadeusz Wosinski
Publikováno v:
Materials Science and Engineering: B. 80:318-321
Vickers diamond indentation at 370°C has been employed to introduce dislocations into the plate-like (000-1) N-polar GaN single crystals. It has been established that using standard Vickers diamond indenter, well-defined ‘rosettes’ of defects ar
Autor:
Klaus Irmscher, Detlef Klimm, Zbigniew Galazka, Toni Markurt, Matthias Bickermann, Steffen Ganschow, Albert Kwasniewski, Rainer Bertram, Martin Albrecht, Reinhard Uecker, Mike Pietsch, Uta Juda, Christo Guguschev, Andreas Fiedler, M. Naumann, Robert Schewski
Publikováno v:
Journal of Physics: Condensed Matter. 29:075701
We present the first-time growth of bulk BaSnO3 single crystals from the melt by direct solidification, their basic electrical and optical properties as well as their structural quality. Our measurement of the melting point (MP) of BaSnO3 amounts to
Autor:
Martin Albrecht, Silke Christiansen, Horst P. Strunk, S. B. Aldabergenova, Sh.B. Baiganatova, Gerhard Frank, T.I. Taurbaev
Publikováno v:
Crystal Research and Technology. 35:899-906
We analyse be means of transmision electron microscopy techniques the processes during the initial stages of diamond growth by magnetron sputtering. We show that a comparatively high density of C is found as deep as 100 nm in the Si substrate. The ca