Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Yuling Liu"'
Publikováno v:
Journal of Applied Electrochemistry. 51:1479-1489
In the process of multilayer copper wiring CMP (chemical mechanical polishing), electrochemical corrosion will occur due to the contact between slurries and metal interface. Inhibitors are added to slurries to reduce the degree of corrosion reactions
Autor:
Jun Wang, Yuling Liu, Wen Luo, Xingxing Wang, Rui Liao, Shichao Yu, Maoxin Hong, Chunxiao Zhao, Baojun Yang, Yang Liu, Xueduan Liu, Guanzhou Qiu
Publikováno v:
The Science of the total environment. 851(Pt 2)
Humic acid has the advantages of wide source, easy availability and environmental friendliness, which may be a good choice for inhibiting chalcopyrite biooxidation and alleviating copper pollution. However, there are few researches on the inhibitory
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
In the process of chemical mechanical polishing (CMP), dishing and erosion are generated after Cu CMP, which will greatly impact the electrical characteristics of the device. In this paper, the synergistic effect of FA/O II complexing agent and 1,2-b
Publikováno v:
Materials Science in Semiconductor Processing. 139:106321
This article proposed an improvement plan for the slurry to reduce the dishing caused during copper chemical mechanical polishing (CMP) of the interconnect structure. According to the difference in the pressure between the concave and convex parts of
Publikováno v:
Microelectronic Engineering. 202:1-8
Wafer surface is usually contaminated by organic residues, such as benzotriazole(BTA), after chemical mechanical planarization (CMP). Due to the reason that these organic residuals need to be removed during the post-CMP cleaning process as well as ke
Publikováno v:
2020 China Semiconductor Technology International Conference (CSTIC).
In state of the art technologies, defect reduction is central to the achievement of low cost, high yield manufacturing. The defects occurred during the CMP process would lead to severe circuit failure and affect yield. In this paper, effect of slurry
Autor:
Yuling Liu, Chong Luo
Publikováno v:
2020 China Semiconductor Technology International Conference (CSTIC).
At present, there are many scholars who have abrasive-free chemical mechanical polishing (AFP) research, because it effectively reduces micro-scratch and grinding adsorption, micro-corrosion, etc., but has not been applied to the project so far, main
Publikováno v:
2020 China Semiconductor Technology International Conference (CSTIC).
In this paper, the effect of Alcohol Ethoxylate (AEO-9) in barrier slurry for chemical mechanical planarization(CMP) of copper interconnection was studied. The results showed that the surface roughness of copper can be reduced by AEO-9. The TEOS(tetr
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:P391-P396
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:P317-P322