Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Yu-Ling Liu"'
Publikováno v:
The Minerals, Metals & Materials Series ISBN: 9783030366278
The microscopic appearance transformation of bornite during leaching and bioleaching was investigated in this article. Leaching experiments, X-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive spectrometer (EDS) were co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d4bf345de51523785841fce76687c22
https://doi.org/10.1007/978-3-030-36628-5_12
https://doi.org/10.1007/978-3-030-36628-5_12
Publikováno v:
Key Engineering Materials. :291-296
The polishing process was optimized according to the polishing rate and its consistency of HE slurry with different dilution multiple on the copper wafers, it can be confirmed that: the best pressure value of HE1, HE10, HE20, HE50 type slurries was 6
Publikováno v:
Key Engineering Materials. :462-468
According to the Bernoulli equation and Darcy formula, the flow model of slurry in micro-channels was established, it indicated that slurry viscosity is the main factor affecting the slurry mean velocity. According to the characteristics that liquid
Publikováno v:
Applied Mechanics and Materials. 307:368-371
In this paper, the multi-hydroxyl polyamines researched by ourselves are used in the slurry of the copper wiring CMP of GLSI, which makes the slurry alkalization. It also has the using as a pH adjusting agent, complexion agent of copper ion, multi- m
Publikováno v:
Advanced Materials Research. :2949-2954
Silica abrasive plays an important role in chemical mechanical planarization (CMP) of copper. In this paper, effect of different silica abrasive concentrations on copper removal rate and planarization performance of copper was investigated. The resul
Publikováno v:
Advanced Materials Research. :321-325
Chemical mechanical polishing (CMP) is the best global planarization technology of GLSI process. After CMP process, there may appear large roughness, micro scratch, dishing pit, erosion pit, with-in-wafer-non-uniformity (WIWNU), organic contamination
Publikováno v:
Advanced Materials Research. :1145-1148
With the microelectronic technology node moves down to 45 nm and beyond, and to reduce the RC delay time, low-k dielectric materials have been used to replace regular dielectric materials. Therefore, the down force of chemical mechanical planarizatio
Publikováno v:
Advanced Materials Research. :2284-2287
Along with the feature size reducing and the increase of integration level rapidly in ULSI,the request for metal impurities contamination on silicon substrate surface appears specially rigorous. In this paper the chelating agent was added in cleani
Publikováno v:
Materials Science Forum. :1111-1114
Chemical mechanical planarization (CMP) of copper interconnection in hydrogen peroxide (H2O2) as oxidizer based alkaline slurry was investigated. The new model is put forward, which is based on the characteristic of H2O2, chemical kinetics and mechan
Publikováno v:
Key Engineering Materials. :820-823
Chemical mechanical polishing (CMP) of copper films in alkaline slurries was investigated. In the copper CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water.The organic alkali was added to adjust the pH, H2O2 was used as