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pro vyhledávání: '"Rovaris, Fabrizio"'
We present a continuum approach able to tackle both elastic and plastic relaxation (via insertion of misfit dislocations) during deposition of Ge on Si(001). Our model is based on a suitable definition of chemical potential, accounting for both surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::6de06cd713ad461820e76cb9b75bd76e
http://hdl.handle.net/10281/127765
http://hdl.handle.net/10281/127765
Autor:
MONTALENTI, FRANCESCO CIMBRO MATTIA, BERGAMASCHINI, ROBERTO, SALVALAGLIO, MARCO, MARZEGALLI, ANNA, MIGLIO, LEONIDA, Backofen, R, ROVARIS, FABRIZIO, ALBANI, MARCO GIOCONDO, Voigt, A
Lattice-mismatched heteroepitaxial growth is nowadays a key step involved in the fabrication of a multitude of devices. However, full control over the different, sometimes competing phenomena taking place during deposition [1] has yet to be reached.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::d311fef34c60f10f522ba83f453eb831
http://hdl.handle.net/10281/91656
http://hdl.handle.net/10281/91656