Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Yanling Shi"'
Autor:
Zhe Zhang, Jun Xu, Xianglong Li, Yanling Shi, Teng Wang, Ziyu Liu, Xiaoqiao Yang, Xiaojin Li, Yabin Sun
Publikováno v:
IEEE Transactions on Electron Devices. 68:885-891
In this article, the impact of intrinsic process fluctuations on reconfigurable field-effect transistor (RFET) is investigated for the first time. Three kinds of process fluctuation sources, including line edge roughness (LER), gate edge roughness (G
Publikováno v:
IEEE Transactions on Electron Devices. 67:3745-3752
Work-function modulation in a reconfigurable field-effect transistor (RFET) is investigated by 3-D TCAD simulations. A significant work-function dependence is found in the critical electrical performances of RFET. The results show that the ON-state d
Publikováno v:
IEEE Transactions on Electron Devices. 67:1894-1901
In this article, a novel arch-shaped asymmetrical reconfigurable field-effect transistor (RFET) has been proposed for the first time. By adding an arch-shaped source region in a silicon nanowire, the ON-state saturated current ( ${\mathrm {I}}_{ \mat
Publikováno v:
IEEE Transactions on Electron Devices. 67:751-757
In this article, a novel reconfigurable field-effect transistor with an asymmetric underlap channel extension at drain side (UCED-RFET) is proposed for the first time. The influence of underlap extension is investigated by extensive 3-D device simula
Publikováno v:
International Journal of Heat and Mass Transfer. 188:122617
Publikováno v:
Journal of Solid State Chemistry. 275:63-69
The ability to increase the emission intensity and turn the emission color of upconversion nanocrystals (NCs) will greatly enhance their application scopes. In this research, the sub-10 nm pure β-NaYF4: Yb3+/Tm3+/Ho3+ core NCs were prepared by using
Autor:
Jun Xu, Teng Wang, Yabin Sun, Yanling Shi, Yue Zhuo, Xianglong Li, Liu Ziyu, Yun Liu, Xiaojin Li
Publikováno v:
Semiconductor Science and Technology.
Autor:
Yunhua Gan, Ningguang Chen, Xiaohong Zheng, Dunfeng Shi, Zhengwei Jiang, Shuran Song, Yanling Shi
Publikováno v:
Journal of Electrostatics. 115:103662
Publikováno v:
Semiconductor Science and Technology. 36:115002
Publikováno v:
Superlattices and Microstructures. 110:330-338
In this paper, a novel tri-independent-gate (TIG) FinFET is proposed for highly flexible SRAM cells design. To mitigate the read-write conflict, two kinds of SRAM cells based on TIG FinFETs are designed, and high tradeoff are obtained between read st