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Publikováno v:
IEEE Transactions on Electron Devices. 68:1202-1206
The optimized postdeposition annealing (PDA) of the high- ${k}$ metal gate is investigated for 1/ ${f}$ noise performance improvement in FinFET technology by using spike annealing (SPA) and SPA-combined millisecond flash annealing (MFLA) treatment. I