Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Shitan Wang"'
Autor:
Can Wang, Lin Li, Dongmei Niu, Yao-zhuang Nie, Haipeng Xie, Baoxing Liu, Yongli Gao, Shitan Wang
Publikováno v:
The Journal of Physical Chemistry C. 125:20697-20705
Autor:
Yangyang Zhang, Na Liu, Haipeng Xie, Jia Liu, Pan Yuan, Junhua Wei, Yuan Zhao, Baopeng Yang, Jianhua Zhang, Shitan Wang, Han Huang, Dongmei Niu, Qi Chen, Yongli Gao
Publikováno v:
Crystals; Volume 11; Issue 12; Pages: 1544
Crystals, Vol 11, Iss 1544, p 1544 (2021)
Crystals, Vol 11, Iss 1544, p 1544 (2021)
The surface composition and morphology of FA0.85MA0.15Pb(I0.85Br0.15)3 films fabricated by the spin-coating method with different concentrations of NH2-POSS were investigated with atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS),
Autor:
Jinxin Liu, Shitan Wang, Xueao Zhang, Han Huang, Chuyun Deng, Xiaoming Zheng, Yuehua Wei, Haipeng Xie, Yongli Gao, Hang Yang, Xiangzhe Zhang
Publikováno v:
Nano Research. 13:952-958
Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier, which is crucial for the realization of high-performance logic components. Here, we systematically investigated a convenient and
Autor:
Shitan Wang, Huachao Zai, Yuquan Liu, Yuan Zhao, Haipeng Xie, Yongli Gao, Baoxing Liu, Han Huang, Qi Chen, Dongmei Niu
Publikováno v:
Organic Electronics. 73:327-331
The electronic structure and surface composition of perovskite films after incorporation of different concentration of CsPbBr3 nanocrystals (NCs) have been investigated with ultraviolet photoelectron spectroscopy (UPS) and X-ray, and angle-resolved p
Publikováno v:
Journal of Physics D: Applied Physics. 55:424008
Using lead phthalocyanine (PbPc) as surface doping material on black phosphorous (BP) we observe enhanced photo-excited carriers in the PbPc/BP heterostructure. The interfacial energy level alignment is investigated with ultra violet photoemission sp
Publikováno v:
Journal of Physics D: Applied Physics. 55:364005
The interfacial modification effect of the molybdenum trioxide (MoO3) buffer layer inserted between Al and black phosphorus (BP) was investigated with photoemission spectroscopy. The results show that MoO3 buffer layer can effectively prevent the des
Autor:
Yunhao Lu, Junting Xiao, Yuan Zhao, Shitan Wang, Bingchen He, Fei Song, Han Huang, Yao Wang, Qiwei Tian, Haipeng Xie, Yongli Gao
Publikováno v:
Synthetic Metals. 251:24-29
Atomically precise graphene nanoribbons (GNRs) can be on-surface synthesized from halogen containing molecular precursors. Here, we investigated the electronic structure evolution of 10,10′-dibromo-9,9′-bianthracene (DBBA), a famous precursor to
Autor:
Xuhui Wei, Lu Lyu, Yingbao Huang, Can Wang, Haipeng Xie, Yongli Gao, Dongmei Niu, Shitan Wang
Publikováno v:
Applied Surface Science. 416:696-703
The interfacial electronic structure and morphology of 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene(C8-BTBT) on polycrystalline Au film was investigated with photoemission spectroscopy (PES), atomic force microscopy (AFM) and grazing incidence X-ra
Autor:
Can Wang, Shitan Wang, Han Huang, Lin Li, Yuan Zhao, Wenjun Tan, Haipeng Xie, Yongli Gao, Lu Lyu, Dongmei Niu, Xiaoliang Liu
Publikováno v:
Synthetic Metals. 229:1-6
Modification by ultra-thin fullerene (C60) insertion layer of about 1 monolayer on the electronic structure and the film growth of 2,7-diocty[1]benzothieno-[3,2-b]benzothiophene (C8-BTBT) on silicon oxide (SiO2) is investigated using ultraviolet phot
Autor:
Jian Zhang, Yulan Huang, Jidong Zhang, Shitan Wang, Donghang Yan, Han Huang, Yongli Gao, Jia Sun, Junliang Yang
Publikováno v:
Organic Electronics. 36:73-81
Organic field-effect transistors (OFETs) based on organic semiconductor material 2,7-dioctyl[1]benzothieno[3,2- b ] benzothiophene (C8BTBT) as the active layer were fabricated by using organic molecular beam deposition (OMBD) and solution-processed m