Zobrazeno 1 - 10
of 13
pro vyhledávání: '"M. V. Belousov"'
Autor:
I. É. Kozin, B. V. Volovik, A. R. Kovsh, Dieter Bimberg, Zh. I. Alferov, A. F. Tsatsul’nikov, A. Yu. Egorov, M. V. Belousov, A. E. Zhukov, V. M. Ustinov, M. V. Maksimov, P. S. Kop’ev, Nikolai N. Ledentsov
Publikováno v:
Scopus-Elsevier
The optical properties of structures with InAs islands and narrow GaAs quantum wells in an AlGaAs host have been investigated. The InAs islands were formed by depositing a layer of InAs with an effective thickness less than one monolayer. The effect
Autor:
C. M. Sotomayor Torres, M. V. Belousov, N. N. Ledentsov, N. N. Faleev, I. A. Kozin, I. N. Yasievich, Mikhail V. Maximov, V. M. Ustinov, P. S. Kop’ev, P. D. Wang
Publikováno v:
Physical Review B. 51:14346-14351
Autor:
M. V. Pavlovskaya, L. T. Ter-Martirosyan, M. V. Belousov, K F Njakshev, Yu V Likholetov, S. F. Karmanenko, A. I. Dedyk, R. A. Chakalov, V. Yu. Davydov
Publikováno v:
Superconductor Science and Technology. 7:727-733
Superconductor-ferroelectric-superconductor (SFS) structures were produced by magnetron sputtering of ceramic YBa2Cu3O7- delta and BaxSr1-xTiO3 targets. Raman spectroscopy was effectively used for characterization of superconducting and ferroelectric
Autor:
Yu V Likholetov, R. A. Chakalov, Orest Vendik, V. Yu. Davydov, A.B. Kozyrev, I T Serenkov, G O Dzjuba, R N Il'in, S. F. Karmanenko, M. V. Belousov, K F Njakshev
Publikováno v:
Superconductor Science and Technology. 6:23-29
The structure and crystallographic orientation of YBa2Cu3O7- delta films on BaxSr1-xTiO3/MgO heteroepitaxial layers were investigated by the conventional methods of electron diffraction, electron microscopy and by specific methods of Raman scattering
Autor:
F. A. Chudnovskii, V.Ya. Velichko, S.L. Shokhor, V. Yu. Davydov, B. Sh. El'Kin, M. V. Belousov
Publikováno v:
Solid State Communications. 81:493-496
Polarized Raman spectra and resistivity-temperature curves for 60 keV N+ ion-implanted epitaxial thin films of YBa2Cu3O7, deposited on SrTiO3 (110) substrates, have been measured. Ion implantation leads to an intensity decrease and a widening of the
Autor:
B. V. Volovik, A. F. Tsatsul’nikov, Nikolai N. Ledentsov, M. V. Maksimov, A. Yu. Chernyshov, M. V. Belousov, D. A. Bedarev, Sergei Ivanov, Yu. G. Musikhin, P. S. Kop’ev, B. Ya. Meltser, V. A. Solov’ev
Publikováno v:
Semiconductors. 33:886-888
It is shown that an array of two-dimensional islands is formed during the growth of ultrathin (∼1.5 monolayers) InSb layers on a GaSb (100) surface by molecular beam epitaxy. After the deposition of several InSb layers separated by narrow barriers,
Publikováno v:
Superconductor Science and Technology. 6:819-821
Orientation of YBa2Cu3O7- delta films at the surface and at the film-(100) MgO substrate interface for various growth temperatures Ts have been studied using Raman scattering. On the film-substrate interface the films were c-oriented for Ts>670 degre
Autor:
M. V. Belousov, VYu Davydov, I.A. Abroyan, S.L. Shokhor, YYa Velichko, BSh El'kin, FA Chudnovsky
Publikováno v:
Vacuum. 44:951-952
Raman scattering spectra for YBa2Cu3O7−x films at 60 keV N+ ion bombardment are investigated. The co-existence of amorphous and crystal phases, negligible oxygen losses, disorder in anion and cation subsystems is supposed to follow ion bombardment.
Publikováno v:
Physica Status Solidi (b). 80:417-424
The IR reflection and Raman spectra of NaNO3, Ba(NO3)2, KNO3, and NH4Cl crystals containing isotopic impurities of 15N and 18O are studied. The experimental data on local vibration modes are compared with those calculated by the method of Green's fun
Autor:
Alexandra Suvorova, Mikhail V. Maximov, A. R. Kovsh, P. S. Kop’ev, Zh. I. Alferov, Marius Grundmann, A. F. Tsatsul’nikov, V. M. Ustinov, A. Yu. Egorov, N. A. Bert, I. L. Krestnikov, B. V. Volovik, A. E. Zhukov, Dieter Bimberg, M. V. Belousov, Nikolai N. Ledentsov
Publikováno v:
Scopus-Elsevier
The structural and optical properties of vertically coupled In 0.5 Ga 0.5 As quantum dots (QDs) in a GaAs matrix with a large number of QD stacks has been studied. We show that for large numbers of QD deposition cycles ( N ), in addition to vertical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be232400693a3a42b9f5547f3d2cc6f9
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