Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Hiroshi Nakashima"'
Publikováno v:
Advanced Functional Materials.
Publikováno v:
Materials Science in Semiconductor Processing. 162:107504
Publikováno v:
Langmuir. 35:11725-11734
The lateral diffusion of lipids is a key factor when functionalizing artificial planar bilayer lipid membranes (BLMs). Fluorescence recovery after photobleaching (FRAP) is an established method for evaluating the fluidity of BLMs by the quantitative
Autor:
J. Tadano, Keisuke Yamamoto, R. Yamashiro, Kohei Hamaya, Dong Wang, Masato Zenitaka, Hiroshi Nakashima, Takeshi Kanashima, Hiroshi Nohira, Shinya Yamada
Publikováno v:
Materials Science in Semiconductor Processing. 70:260-264
Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic na
Autor:
H. Higashi, Mario Nakano, Keisuke Yamamoto, Hiroshi Nakashima, Kenji Kasahara, Yuta Nagatomi, Kohei Hamaya
Publikováno v:
Materials Science in Semiconductor Processing. 70:68-72
We examine electrical properties of pseudo-single-crystalline (PSC) Ge films, formed by modulated Au-induced-crystallization (GIC) method, on glass substrates. Although higher growth temperatures and thicker Au layers in GIC conditions degrade the Ha
Autor:
Taisei Sakaguchi, Tomoki Tateyama, Shintaro Tanaka, Wei Chen Wen, Hiroshi Nakashima, Keisuke Yamamoto, Liwei Zhao, Dong Wang, Yuta Nagatomi
Publikováno v:
Materials Science in Semiconductor Processing. 70:246-253
In this paper, we present comprehensive results on Al-postmetallization annealing (Al-PMA) effect for the SiO 2 /GeO 2 gate stack on a Ge substrate, which were fabricated by a physical vapor deposition method. The effective oxide thickness of metal-o
Publikováno v:
Materials Science in Semiconductor Processing. 70:283-287
An asymmetric Schottky tunneling source field-effect transistor (STS FET) is a prospective device structure to suppress the short channel effect and to reduce the off-state current. An obstacle to implement a STS FET with a high mobility Ge channel w
Autor:
Koji Sumitomo, Shingo Tsukada, Satoshi Sasaki, Tetsuhiko Teshima, Aya Tanaka, Nahoko Kasai, Hiroshi Nakashima
Publikováno v:
Advanced Functional Materials. 26:8185-8193
Microfabricated mobile electrodes, nanopallets, designed to provide adherent cells with electrical stimulation are reported. Nanopallets composed of a cross-linked silk fibroin hydrogel matrix incorporated with poly(3,4-ethylenedioxythiophene):polyst
Autor:
Calum S. Henderson, Toichiro Goto, Shengnan Wang, Yuko Ueno, Yoshiaki Kashimura, Hiroshi Nakashima, Tetsuhiko Teshima, Makoto Takamura, Yui Ogawa, Satoshi Sasaki
Publikováno v:
Nano letters. 19(1)
Three-dimensional (3D) graphene architectures are of great interest as applications in flexible electronics and biointerfaces. In this study, we demonstrate the facile formation of predetermined 3D polymeric microstructures simply by transferring mon
Publikováno v:
Materials Science and Engineering: A. 649:417-425
We report an in-situ study of the deformation-induced rotation and transformation of austenite grains in a low-carbon steel treated by the quenching and partitioning process using electron back-scattered diffraction and uniaxial tension experiments.