Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Hao, Tong"'
Publikováno v:
Rare Metals. 41:1735-1742
Publikováno v:
Rare Metals. 41:1889-1898
Publikováno v:
Langmuir. 38:2711-2719
Micro-electrochemical machining (micro-ECM) can machine microstructures with excellent surface integrity on difficult-to-cut alloys. During micro-ECM, stray corrosion results in tapered sidewalls of machined structures. To suppress the stray corrosio
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. :2200463
Publikováno v:
Advanced Functional Materials. 33:2211491
Autor:
Quan-ya Wei, Hua Zhu, Shi-jin Yu, Guo-qian Xu, Jian-hong Yin, Jia-hao Tong, Tian-rui Chen, Xuan-nan He, Ping-chun Guo, He-dong Jiang, Jia-ke Li, Yan-xiang Wang
Publikováno v:
Applied Surface Science. 608:155093
Autor:
Meng Xu, Xiangshui Miao, Kai-Ming Ho, Xiaomin Cheng, Hao Tong, Ming Xu, Cai-Zhuang Wang, Zhenhai Yu, Songyou Wang, Y. R. Guo, Chao Chen, Kailang Xu
Publikováno v:
Journal of Materials Chemistry C. 7:9025-9030
Phase change memory is an emerging nonvolatile memory technology, recently becoming the center of attention to bridge the speed gap between fast dynamic random access memory and slow flash-based solid-state drives. Lately, CrGeTe3 has been investigat
Publikováno v:
RSC Advances. 9:9457-9461
The thermal conductivities of GeTe/Bi2Te3 superlattice-like materials are calculated based on density functional perturbation theory (DFPT) and measured using a 3ω method. The calculated results show that the lattice thermal conductivity or thermal
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
The tunable disorder of vacancies upon annealing is an important character of crystalline phase-change material Ge2Sb2Te5 (GST). A variety of resistance states caused by different degrees of disorder can lead to the development of multilevel memory d
Fabrication of flexible nanoporous nitrogen-doped graphene film for high-performance supercapacitors
Publikováno v:
Journal of Solid State Electrochemistry. 21:1653-1663
Flexible nanoporous nitrogen-doped graphene film ( PNGF) prepared by facile hydrothermal ammonia reaction of nanoporous graphene oxide film (PGOF) is reported. The specific capacitance of the PNGF are 468 F g−1 at a scan rate of 2 mV s−1. The cap