Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Chih-Hsiang Yang"'
Publikováno v:
Surfaces and Interfaces. 39:102993
Autor:
Shui-Yang Lien, Chih-Hsiang Yang, X.G. Meng, Wen-Zhang Zhu, Xiao-Ying Zhang, Wei Huang, Songyan Chen, Chia-Hsun Hsu, Chung-Yuan Kung, Fei-Bing Xiong
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the
Autor:
Chia-Hsun Hsu, Shui-Yang Lien, Chao-Chun Wang, Dong-Sing Wuu, Yang-Shih Lin, Chih-Hsiang Yang
Publikováno v:
Materials Chemistry and Physics. 133:63-68
Increasing the light scattering in monocrystalline silicon solar cells by surface texturing is an emerging field of practice in modern silicon photovoltaic. In this article, the surface micro-textures were performed on the monocrystalline silicon sur
Publikováno v:
Microwave and Optical Technology Letters. 52:1872-1877
This letter presents a compact and novel folded antenna with curved slots for ultra-wideband (UWB) applications.The proposed antenna originates from an antenna, which consists of a pair of symmetrically curved radiating slots fed by a CPW transmissio
Publikováno v:
Applied Surface Science. 254:6155-6157
Shallow junction formation and low thermal budget control are important for advanced device manufacturing. Implant into silicide (IIS) method is a candidate to achieve both requirements. In this work we show that the high activation ability of the im
Publikováno v:
Nanoscale Research Letters
Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much