Zobrazeno 1 - 10
of 640
pro vyhledávání: '"Cheng, Li"'
Autor:
Jie Hou, Runze Liu, Peigeng Han, Cheng Luo, Zhiling Ding, Wei Zhou, Cheng Li, Juntao Li, Yang Zhao, Junsheng Chen, Jianyong Liu, Bin Yang
Publikováno v:
Nano Letters. 23:3762-3768
Autor:
Yan-peng LI, Chang-rui WANG, Xiao-dong DU, Wei TIAN, Tao ZHANG, Jun-shan HU, Bo LI, Peng-cheng LI, Wen-he LIAO
Publikováno v:
Transactions of Nonferrous Metals Society of China. 33:969-996
Autor:
Jing Zhao, Xiang Jin, Huiqin Yun, Lin Zheng, Jianjun Zhao, Cheng Li, Zhijun Hao, Ting Xing, Huaijin Ma, Ru Xing
Publikováno v:
Journal of Low Temperature Physics. 211:59-76
Publikováno v:
CrystEngComm. 25:3126-3141
The recent progress in optical applications of organic donor–acceptor co-crystals is reviewed in terms of material design, synthetic approach and future perspectives.
Autor:
Cheng Li, Linming Zhou, Xiangwei Guo, Yuhui Huang, Hui Zhang, Shurong Dong, Yongjun Wu, Zijian Hong
Publikováno v:
Journal of Materials Research. 38:664-674
Autor:
Xiaoru Sun, Huitong Ruan, Qidong Liu, Silu Cao, Qi Jing, Yaru Xu, Lize Xiong, Wenguo Cui, Cheng Li
Publikováno v:
Nano Research. 16:2938-2948
Autor:
Linshan Luo, Feng Zheng, Haowen Gao, Chaofei Lan, Zhefei Sun, Wei Huang, Xiang Han, Ziqi Zhang, Pengfei Su, Peng Wang, Shengshi Guo, Guangyang Lin, Jianfang Xu, Jianyuan Wang, Jun Li, Cheng Li, Qiaobao Zhang, Shunqing Wu, Ming-Sheng Wang, Songyan Chen
Publikováno v:
Nano Research. 16:1634-1641
Publikováno v:
International Journal of Applied Ceramic Technology. 19:3062-3071
Autor:
Cheng Li, Jiang Sheng Hong, Yu Hui Huang, Xiao Ma, Mao Sen Fu, Juan Li, Xiao Qiang Liu, Yong Jun Wu
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:16414-16424
Autor:
guangyang Lin, Jinhui Qian, Haokun Ding, Songsong Wu, Cheng Li, Jianyuan Wang, Jianfang Xu, Wei Huang, Songyan Chen
Publikováno v:
Journal of Physics D: Applied Physics.
In this work, strong photoluminescence (PL) from physical vapor deposited GeSn on Ge-buffered Si is harvested by pursuing high deposition temperature. High-quality Ge0.938Sn0.062 film is obtained through sputtering epitaxy at a record high temperatur