Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Gennady A. Smolyakov"'
Autor:
Nathan J. Withers, Marek Osinski, Dale L. Huber, Gema J. Alas, Landon A. Schmucker, DeYannah J. Walker, Sergei A. Ivanov, Adreanna G. Rael, Alexander Neumann, Arjun Senthil, Shruti I. Gharde, Gennady A. Smolyakov, Rafael A. Castro, John Watt, Mark V. Reymatias
Publikováno v:
2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
We have developed a novel method of pump-probe luminescence thermometry based on the detection of photoluminescence signal phase change versus power of the pumping laser, and applied it to studies of optical cooling from colloidal quantum dots embedd
Autor:
Dominic Bosomtwi, Adreanna G. Rael, Nathan J. Withers, Yuliya Kuznetsova, Gema J. Alas, Alexander Neumann, Hosuk Lee, DeYannah J. Walker, Gennady A. Smolyakov, Sergei A. Ivanov, Shruti I. Gharde, Troy A. Hutchins-Delgado, Sami A. Nazib, Marek Osinski, Dale L. Huber, Arjun Senthil, Mark V. Reymatias
Publikováno v:
Photonic Heat Engines: Science and Applications II.
Anti-Stokes photoluminescence from colloidal CdSeS/ZnS quantum dots (QDs) is observed. The QDs were inserted into the core of wider-bandgap SiO2/Si3N4/SiO2 structure by thin film deposition and confirmed as promising nanoemitters for laser cooling du
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 9:1333-1339
Broad-area InGaAs-GaAs-AlGaAs double-quantum-well graded-index separate-confinement heterostructure lasers with as-grown and intermixed active regions were fabricated and characterized. An impurity-free vacancy diffusion method was used to intermix t
Autor:
Marek Osinski, Sergei A. Ivanov, Samantha M. Stephens, Gennady A. Smolyakov, Brian A. Akins, John B. Plumley, Nathaniel C. Cook
Publikováno v:
2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR).
We have synthesized ZnSe:Mn/ZnS doped core/shell quantum dots with high temperature stability and 91.0% quantum efficiency at the 597 nm emission with 412 nm excitation, very attractive as nanophosphors for white LEDs.
Publikováno v:
SPIE Proceedings.
A ridge-waveguide 1.55-μm semiconductor laser with a multiple-quantum-well carrier confinement structure was characterized from room temperature down to 10 K. The temperature dependence of important laser parameters, such as threshold current, serie
Publikováno v:
2008 IEEE 21st International Semiconductor Laser Conference.
Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum-dot ring lasers with low threshold current density and high unidirectionality is reported. The new design suppresses unwanted counterpropagating modes more effe
Autor:
Jiangjiang Gu, Tosifa A. Memon, Gennady A. Smolyakov, Marek Osinski, Tingyi Gu, Nathan J. Withers, Krishnaprasad Sankar, Brian A. Akins
Publikováno v:
2008 Conference on Lasers and Electro-Optics.
Positron emission tomography requires high-brightness fast-decay scintillators for coincidence counting of positron annihilation events. We demonstrate that LaF3:Ce nanocrystals show promising characteristics for that application. Scintillation respo
Autor:
Tingyi Gu, Jiangjiang Gu, Nathan J. Withers, Tosifa A. Memon, M. Osinki, Krishnaprasad Sankar, Brian A. Akins, Gennady A. Smolyakov
Publikováno v:
2008 Conference on Lasers and Electro-Optics.
Effects of 137Cs gamma irradiation on photoluminescent properties of CdSe/ZnS colloidal quantum dots are reported. Optical degradation was evaluated by measuring dependence of photoluminescence intensity on irradiation dose. CdSe/ZnS quantum dots sho
Autor:
Nathan J. Withers, Hongjun Cao, Gennady A. Smolyakov, Luke F. Lester, A.L. Gray, Marek Osinski
Publikováno v:
2007 Conference on Lasers and Electro-Optics (CLEO).
Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum dot ring lasers with high unidirectionality is reported. The new design suppresses the unwanted counterpropagating modes more effectively than in the previous S
Publikováno v:
2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference.
We report fabrication and characterization of light-emitting diodes operating at room temperature with a peak wavelength of ~2.0 mum by using heterostructures of InGaSb/AlGaAsSb quantum wells grown by molecular beam epitaxy on GaSb substrates.