Zobrazeno 1 - 2
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pro vyhledávání: '"Yuuichi Takeuchi"'
Publikováno v:
Materials Science Forum. :175-178
The in-situ doping of aluminum and nitrogen in migration enhanced embedded epitaxy (ME3) is investigated with the aim to apply it to the realization and fabrication of all-epitaxial, normally-off 4H-SiC JFET devices. This ME3 process consists of the
Publikováno v:
Journal of Crystal Growth. :1224-1229
Selective homoepitaxial growth has been carried out on partly masked SiC substrates using a carbon mask. The SiC epitaxial mesa structures on a SiC substrate have been obtained after the carbon mask was removed. Polycrystalline 3C-SiC nuclei were gro