Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Boscardin, M."'
Autor:
P. Gregori, Lodovico Ratti, Maria Giuseppina Bisogni, G.-F. Dalla Betta, Gianluca Traversi, M. Ciacchi, Matteo Rama, L. Bosisio, Massimo Manghisoni, S. Bettarini, Claudio Piemonte, Sabina Ronchin, V. Speziali, M. Novelli, Gabriele Simi, Mario Giorgi, G. Batignani, Valerio Re, Maurizio Boscardin, F. Sandrelli, S. Dittongo, F. Forti, Valeria Rosso, Nicola Zorzi, I. Rachevskaia, M. Carpinelli
Publikováno v:
Fondazione Bruno Kessler-IRIS
In the past few years we have developed a technological process allowing for the fabrication of radiation detectors with integrated electronics on high-resistivity silicon substrates. We report on some recent results relevant to the process optimisat
On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes
Autor:
G.-F. Dalla Betta, Giovanni Soncini, G. U. Pignatel, Maurizio Boscardin, L. Bosisio, Giovanni Verzellesi
Publikováno v:
IEEE Transactions on Electron Devices. 46:817-820
We show that in high-resistivity silicon bulk generation lifetime and surface generation velocity can not be measured with acceptable accuracy using a single gated diode, unless the gate length is suitably tailored. The accuracy with which bulk gener