Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yi, Xiaoyan"'
Light Extraction Efficiency Improvement by Curved GaN Sidewalls in InGaN-Based Light-Emitting Diodes
Publikováno v:
IEEE Photonics Technology Letters. 24:243-245
Polygonal GaN sidewalls are fabricated using a laser scriber and a wet-etching process. After a two-step laser scribing process and a hot acid etching treatment, curved GaN sidewalls are formed consisting of the chemically stable (10-1-2) crystallogr
Autor:
Jingmei Fan, Libin Wang, Zhiqiang Liu, Fuhua Yang, Jinmin Li, Yiping Zeng, Liangchen Wang, Hua Yang, Yu Chen, Guohong Wang, Yi Xiaoyan
Publikováno v:
SPIE Proceedings.
We investigate the relation between the thickness of sapphire substrates and the extraction efficiency of LED. The increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100um to 200um. But the ou
Publikováno v:
SPIE Proceedings.
The structure of micro-LEDs was optimized designed. Optical, electrical and thermal characteristics of micro-LEDs were improved. The optimized design make micro-LEDs suitable for high-power device. The light extraction efficiency of micro-LEDs was an
Autor:
Debo Guo, Jinmin Li, Guohang Wang, Liangchen Wang, Yu Chen, Yi Xiaoyan, Libin Wang, Zhiqiang Liu
Publikováno v:
SPIE Proceedings.
Compared with conventional GaN based LEDs structure, vertical electrodes structure can improve the current uniformity to some extend. However, due to the presence of N-GaN series resistance, current crowing phenomenon still exist at the electrode edg
Autor:
Yi Xiaoyan, Xiaodong Wang, Fuhua Yang, Yan Li, Hua Yang, Liangchen Wang, Guohong Wang, Jinmin Li
Publikováno v:
SPIE Proceedings.
Different types of dielectric optical coatings for GaN based high bright LEDs were designed and discussed. The optical coatings included the anti-reflection (AR) coating, high-reflection (HR) coating, and omni-directional high reflection coating. Mai
Autor:
Liangchen Wang, Xiaodong Wang, Yan Li, Fuhua Yang, Hua Yang, Yi Xiaoyan, Libin Wang, Guohong Wang, Jingmei Fan
Publikováno v:
SPIE Proceedings.
In this paper we studied the influence of N electrode on the extraction efficiency of high power light-emitting diodes (LEDs). Simulation and experimental results show that comparing with traditional metal N electrodes the extraction efficiency of LE
Autor:
Yan Li, Xiaodong Wang, Jinxia Guo, Yiping Zeng, Liangchen Wang, Guohong Wang, Yi Xiaoyan, Jinmin Li, Fuhua Yang
Publikováno v:
SPIE Proceedings.
The effects of plasma induced damage in different conditions of ICP and PECVD processes on LEDs were presented. For ICP mesa etch, in an effort to confirm the effects of dry etch damage on the optical properties of p-type GaN, a photoluminescence (PL
Autor:
Yao Ran, Li Jing, Wang Bing, Yi Xiaoyan, Deng Yuanming, Wang Guohong, Li Panpan, Li Hongjian, Li Jinmin, Liang Meng, Li Zhicong
Publikováno v:
Journal of Semiconductors. 32:114007
Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes (LEDs), the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared.
Optical and electrical characteristics of GaN vertical light emitting diode with current block layer
Publikováno v:
Journal of Semiconductors. 32:064007
A GaN vertical light emitting diode (LED) with a current block layer (CBL) was investigated. Vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated. Optical and electrical tests were carried out. The
Autor:
Yang Hua, Duan Yao, Li Zhicong, Wang Guohong, Ruan Jun, Zeng Yiping, Wang Xiaofeng, Yi Xiaoyan
Publikováno v:
Journal of Semiconductors. 30:094002
Gallium nitride (GaN) based light emitting diodes (LEDs) with a thick and high quality ZnO film as a current spreading layer grown by metal-source vapor phase epitaxy (MVPE) are fabricated successfully. Compared with GaN-based LEDs employing a Ni/Au