Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Jacob H"'
Autor:
Sujin Guo, Xianghua Wen, Chelsea A. Clark, Kimberly N. Heck, Minghao Wang, Duan Lijie, Michael S. Wong, Thomas P. Senftle, Paul Westerhoff, Yonghui Song, Bo Wang, Jacob H. Arredondo
Publikováno v:
Environmental Science & Technology Letters. 7:613-619
Concern over water contamination by per/polyfluoroalkyl substances (PFAS) has highlighted the lack of effective treatment approaches. Photocatalysis offers advantages of using ambient conditions fo...
Autor:
Devon Eichfeld, Trent Borman, Sukwon Choi, Carlos Perez, Kevin Ferri, Weijie Wang, Brian M. Foley, Yiwen Song, Srabanti Chowdhury, Jae-Hyun Ryou, Jacob H. Leach, Dong Ji, James Spencer Lundh, Jon Paul Maria, Anusha Krishnan
Publikováno v:
Journal of Electronic Packaging. 142
Gallium nitride (GaN) has emerged as one of the most attractive base materials for next-generation high-power and high-frequency electronic devices. Recent efforts have focused on realizing vertical power device structures such as in situ oxide, GaN
Autor:
Sukwon Choi, Yiwen Song, Craig McGray, Sarit Zhukovsky, Brian M. Foley, Tina Hess, Bikramjit Chatterjee, Jacob H. Leach
Publikováno v:
2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).
The β-gallium oxide (Ga 2 O 3 ) material system offers the potential to dramatically improve the electrical performance and cost-effectiveness of next-generation power electronics. This is because of its ultra-wide bandgap (~4.8 eV) and the availabi
Autor:
Boris Le Guennic, Stéphane Rigaut, Lucy E. Darago, Jacob H. Olshansky, Jeffrey R. Long, Khetpakorn Chakarawet, Miguel I. Gonzalez, Lucie Norel
Publikováno v:
Angewandte Chemie International Edition
Angewandte Chemie International Edition, 2018, 57 (7), pp.1933-1938. ⟨10.1002/anie.201712139⟩
Angewandte Chemie International Edition, Wiley-VCH Verlag, 2018, 57 (7), pp.1933-1938. ⟨10.1002/anie.201712139⟩
Angewandte Chemie International Edition, 2018, 57 (7), pp.1933-1938. ⟨10.1002/anie.201712139⟩
Angewandte Chemie International Edition, Wiley-VCH Verlag, 2018, 57 (7), pp.1933-1938. ⟨10.1002/anie.201712139⟩
International audience; The first dysprosium complexes with a terminal fluoride ligand are obtained as air-stable compounds. The strong, highly electrostatic dysprosium-fluoride bond generates a large axial crystal-field splitting of the J=15/2 groun
Publikováno v:
Colloids and Surfaces A: Physicochemical and Engineering Aspects. 519:2-10
This paper is a review of our work with Scheludko–Exerowa thin liquid film—pressure balance technique TLF-PBT, the first systematic application of the technique to petroleum systems. New insights were gained in understanding the behavior of petro
Publikováno v:
The journal of physical chemistry. B. 123(7)
Achieving high-yielding photoinduced charge separation through the π-stacked bases of DNA is a critical requirement for realizing numerous DNA-based technologies. In the current work, we combine two strategies for achieving high-yield charge separat
Autor:
M. Yamaga, Katharina Lorenz, Akhilesh K. Singh, Jacob H. Leach, Paul R. Edwards, Michal Bockowski, Kevin P. O'Donnell, Douglas Cameron, Menno J. Kappers
Publikováno v:
Materials, Vol 11, Iss 10, p 1800 (2018)
Materials
Materials
Europium is the most-studied and least-well-understood rare earth ion (REI) dopant in GaN. While attempting to increase the efficiency of red GaN light-emitting diodes (LEDs) by implanting Eu+ into p-type GaN templates, the Strathclyde University gro
IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates
Publikováno v:
Journal of Materials Science: Materials in Electronics. 27:6108-6114
To date, a majority of epitaxial layers for vertical gallium nitride (GaN) power Schottky diodes have been grown by metalorganic chemical vapor deposition. In this work, we investigate the electrical properties of vertical GaN Schottky diodes with dr
Autor:
Kevin P. O'Donnell, M. Yamaga, Douglas Cameron, Katharina Lorenz, Jacob H. Leach, Menno J. Kappers, Paul R. Edwards, Akhilesh K. Singh, Michal Bockowski
Europium is the most-studied and least-well-understood rare earth ion (REI) dopant in GaN. While attempting to increase the efficiency of red GaN light-emitting diodes (LEDs) by implanting Eu+ into p-type GaN templates, the Strathclyde University gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8ec1ec15fbe68aadb43de3247ea4fdf
https://doi.org/10.20944/preprints201807.0129.v1
https://doi.org/10.20944/preprints201807.0129.v1
Autor:
Kenneth A. Jones, Joshua R. Smith, Edward A. Preble, Randy P. Tompkins, K. Udwary, Fatemeh Shahedipour-Sandvik, Puneet Suvarna, Jacob H. Leach, K.W. Kirchner, Jeffrey M. Leathersich
Publikováno v:
Journal of Electronic Materials. 43:850-856
We have examined the performance of gallium nitride (GaN) high-power Schottky diodes fabricated on unintentionally doped (UID) metalorganic chemical vapor deposition (MOCVD) films grown simultaneously on four substrates ranging in threading dislocati