Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Shitan Wang"'
Autor:
Can Wang, Lin Li, Dongmei Niu, Yao-zhuang Nie, Haipeng Xie, Baoxing Liu, Yongli Gao, Shitan Wang
Publikováno v:
The Journal of Physical Chemistry C. 125:20697-20705
Autor:
Junhua Wei, Shitan Wang, Dongmei Niu, Haipeng Xie, Pan Yuan, Yuquan Liu, Yangyang Zhang, Yongli Gao, Yuan Zhao
Publikováno v:
Results in Physics, Vol 29, Iss, Pp 104692-(2021)
The interface electronic structure between rubrene and permalloy (Ni80Fe20) has been studied by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). We find that the downward energy level bending at the rubrene/NiF
Autor:
Yunhao Lu, Junting Xiao, Yuan Zhao, Shitan Wang, Bingchen He, Fei Song, Han Huang, Yao Wang, Qiwei Tian, Haipeng Xie, Yongli Gao
Publikováno v:
Synthetic Metals. 251:24-29
Atomically precise graphene nanoribbons (GNRs) can be on-surface synthesized from halogen containing molecular precursors. Here, we investigated the electronic structure evolution of 10,10′-dibromo-9,9′-bianthracene (DBBA), a famous precursor to
Autor:
Jie Jiang, Dongmei Niu, Shitan Wang, Guangdi Feng, Youzhen Li, Lin Li, Haipeng Xie, Xiaoliang Liu, Yongli Gao, Yuan Zhao, Lu Lyu
Publikováno v:
Results in Physics, Vol 19, Iss, Pp 103590-(2020)
The modification of C60 nano-interlayers on the organic field-effect transistors (OFETs) based on 2,7-diocty[1]benzothieno-[3,2-b]benzothiophene (C8-BTBT)/SiO2 was addressed at both the electronic structure and device level. It is observed that a ban
Autor:
Yuan Zhao, Han Huang, Can Wang, Dongmei Niu, Wenjun Tan, Haipeng Xie, Lin Li, Yongli Gao, Shitan Wang, Yunlai Deng
Publikováno v:
The Journal of Physical Chemistry Letters. 9:5254-5261
The heteroepitaxial growth of fullerene (C60) on single-crystal black phosphorus (BP) has been studied using low-energy electron diffraction, X-ray and ultraviolet photoelectron spectroscopy, and density functional theory simulation. The occupied orb
Autor:
Shitan Wang, Yang Chen, Han Huang, Juxiang Wang, Chuan Qian, Ying Fu, Haipeng Xie, Yongli Gao, Jia Sun, Junliang Yang, Ling-an Kong
Publikováno v:
ACS Photonics. 4:2573-2579
Organic photomemory based on heterojunction phototransistor has been fabricated utilizing vanadyl-phthalocyanine (VOPc) on para-sexiphenyl (p-6P) thin films. Under 365 nm ultraviolet light irradiation, the ratio of photocurrent and dark current (Iph/
Autor:
Xuhui Wei, Lu Lyu, Yingbao Huang, Can Wang, Haipeng Xie, Yongli Gao, Dongmei Niu, Shitan Wang
Publikováno v:
Applied Surface Science. 416:696-703
The interfacial electronic structure and morphology of 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene(C8-BTBT) on polycrystalline Au film was investigated with photoemission spectroscopy (PES), atomic force microscopy (AFM) and grazing incidence X-ra
Autor:
Shitan Wang, Haipeng Xie, Yuquan Liu, Yongli Gao, Can Wang, Xuhui Wei, Dongmei Niu, Baoxing Liu
Publikováno v:
The Journal of Physical Chemistry C. 121:18084-18094
The interfacial electronic structure at the organic–inorganic semiconductor interface plays an important role in determining the electrical and optical performance of organic-based devices. Here, we studied the molecular alignment and electronic st
Autor:
Can Wang, Shitan Wang, Han Huang, Lin Li, Yuan Zhao, Wenjun Tan, Haipeng Xie, Yongli Gao, Lu Lyu, Dongmei Niu, Xiaoliang Liu
Publikováno v:
Synthetic Metals. 229:1-6
Modification by ultra-thin fullerene (C60) insertion layer of about 1 monolayer on the electronic structure and the film growth of 2,7-diocty[1]benzothieno-[3,2-b]benzothiophene (C8-BTBT) on silicon oxide (SiO2) is investigated using ultraviolet phot
Publikováno v:
Results in Physics, Vol 18, Iss, Pp 103222-(2020)
The electronic properties of the interface between Al and black phosphorus were studied by photoemission spectroscopy (PES). We observed that the growth pattern of Al deposited onto the BP film is Stranski-Krastanov mode. There is a reaction between