Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Justin Norman"'
Autor:
Justin Norman, John E. Bowers, Christopher R. Fitch, Igor P. Marko, Stephen J. Sweeney, Daehwan Jung, Aidas Baltusis
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
On-chip lasers are a key component for the realization of silicon photonics. The performance of silicon-based quantum dot (QD) devices is approaching equivalent QDs on native substrates. To drive forward design optimization we investigated the temper
Autor:
Matteo Buffolo, Enrico Zanoni, Gaudenzio Meneghesso, Lorenzo Rovere, Daehwan Jung, Carlo De Santi, John E. Bowers, Matteo Meneghini, Justin Norman, Robert W. Herrick
Publikováno v:
IEEE Journal of Quantum Electronics. 57:1-8
This paper investigates the impact of dislocation density and active layer structure on the degradation mechanisms of 1.3 $\mu \text{m}$ InAs Quantum Dot (QD) lasers for silicon photonics. We analyzed the optical behavior of two sets of samples, havi
Autor:
Gaudenzio Meneghesso, Matteo Buffolo, Justin Norman, Robert W. Herrick, Carlo De Santi, Enrico Zanoni, Federico Lain, Matteo Meneghini, M. Zenari, John E. Bowers
This paper investigates the origin of the diffusion process responsible for the optical degradation of InAs quantum dot (QD) laser diodes epitaxially grown on silicon. By means of a series of constant-current stress experiments carried out at differe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1671bbcf11bd1e9a519f5552df1b4de4
http://hdl.handle.net/11577/3412513
http://hdl.handle.net/11577/3412513
Autor:
Daehwan Jung, Lorenzo Rovere, Gaudenzio Meneghesso, Fabio Samparisi, John E. Bowers, Matteo Meneghini, Justin Norman, Robert W. Herrick, Enrico Zanoni, Matteo Buffolo, Carlo De Santi
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 26:1-8
This work investigates the degradation processes affecting the long-term reliability of 1.3 μm InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical mechan
Autor:
Chen Shang, Daehwan Jung, Michael Kennedy, Arthur C. Gossard, Robert W. Herrick, Justin Norman, John E. Bowers, Zeyu Zhang, Mario Dumont
Publikováno v:
IEEE Journal of Quantum Electronics. 55:1-11
$p$ -type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing commercially relevant quantum dot devices on silicon and are
Autor:
Songtao Liu, Justin Norman, Mario Dumont, Daehwan Jung, Alfredo Torres, Arthur C. Gossard, John E. Bowers, S. Liu, A. Torres, A. Gossard, J. Bowers, D. Jung, J. Norman, M. Dumont
Publikováno v:
ACS Photonics. 6:2523-2529
High gain and high saturation output power silicon-based semiconductor optical amplifiers (SOAs) are essential elements in future large-scale silicon photonic integrated circuits (PICs) to compensa...
Publikováno v:
2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Jun 2021, Munich, France. pp.1-1, ⟨10.1109/CLEO/Europe-EQEC52157.2021.9542300⟩
2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Jun 2021, Munich, France. pp.1-1, ⟨10.1109/CLEO/Europe-EQEC52157.2021.9542300⟩
Silicon-based epitaxial quantum dot (QD) lasers with strong tolerance for back-reflections have paved the way for developing isolator-free photonics integrated circuits (PICs). This remarkable feature is attributed to the peculiar benefits of QDs, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b0f4b4cbf76af9f0ba3f673b1755640
https://hal.telecom-paris.fr/hal-03363325
https://hal.telecom-paris.fr/hal-03363325
Publikováno v:
Physical Review A
Physical Review A, American Physical Society 2021, 103 (3), ⟨10.1103/PhysRevA.103.033509⟩
Physical Review A, American Physical Society 2021, 103 (3), ⟨10.1103/PhysRevA.103.033509⟩
This work reports on an investigation of the dynamics of $1.3\phantom{\rule{4pt}{0ex}}\ensuremath{\mu}\text{m}$ epitaxial quantum dot (QD) lasers on silicon subject to delayed optical feedback. Operating the device under different feedback conditions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09311ac75b4e51c038e03d0ea39b243d
https://hal.telecom-paris.fr/hal-03363308
https://hal.telecom-paris.fr/hal-03363308
Autor:
Bozhang Dong, Daehwan Jung, John E. Bowers, Justin Norman, Jianan Duan, Frédéric Grillot, Heming Huang
Publikováno v:
IEEE Photonics Technology Letters. 31:345-348
This letter reports on a 1.3- $\mu \text{m}$ reflection insensitive transmission with a quantum dot laser directly grown on silicon in the presence of strong optical feedback. These results show a penalty-free transmission at 10 GHz under external mo
Publikováno v:
physica status solidi (a). 219:2270008