Zobrazeno 21 - 30
of 73
pro vyhledávání: '"Justin Norman"'
Autor:
Jianan Duan, Bozhang Dong, Fan-Yi Lin, John E. Bowers, Heming Huang, Han-Ling Tsay, Justin Norman, Jun-Da Chen, Frédéric Grillot
Publikováno v:
Photonics Europe
Photonics Europe, Mar 2020, Strasboug, France. ⟨10.1117/12.2555471⟩
Photonics Europe, Mar 2020, Strasboug, France. ⟨10.1117/12.2555471⟩
International audience; This work reports on the optical feedback dynamics of InAs/GaAs QD lasers epitaxially grown on silicon operating in both the short and long delay regimes. Both undoped and p-doped QD lasers are considered. Whatever the externa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc97fd66d2972f454e85eec858039b14
https://hal.telecom-paris.fr/hal-02949690/file/EPE2020_BD.pdf
https://hal.telecom-paris.fr/hal-02949690/file/EPE2020_BD.pdf
Autor:
Arthur C. Gossard, Zeyu Zhang, Chen Shang, Jianan Duan, Yating Wan, Robert W. Herrick, Justin Norman, Jennifer Selvidge, Daehwan Jung, Mario Dumont, Michael Kennedy, Frédéric Grillot, Heming Huang, Songtao Liu, John E. Bowers
Publikováno v:
Silicon Photonics XV
Silicon Photonics XV, Feb 2020, San Francisco, France. pp.2, ⟨10.1117/12.2542912⟩
Silicon Photonics XV, Feb 2020, San Francisco, France. pp.2, ⟨10.1117/12.2542912⟩
Direct epitaxial growth of III-V lasers on silicon provides the most economically favorable means of photonic integration but has traditionally been hindered by poor material quality. Relative to commercialized heterogeneous integration schemes, epit
Autor:
Carlo De Santi, Robert W. Herrick, Gaudenzio Meneghesso, Fabio Samparisi, John E. Bowers, Enrico Zanoni, Justin Norman, Matteo Buffolo, Matteo Meneghini, Daehwan Jung
Publikováno v:
Novel In-Plane Semiconductor Lasers XIX.
We investigate the degradation processes that limit the long-term lifetime of 1.3 μm quantum dot lasers grown on silicon substrate. The analysis is based on combined optical and electrical characterization, carried out before and during accelerated
Publikováno v:
Novel In-Plane Semiconductor Lasers XIX.
Passively mode-locked InAs/InGaAs quantum dot on silicon lasers emitting at 1310nm are promising sources for high-speed high-capacity communication applications. Optical self-injection stabilization of a monolithic passively mode-locked quantum dot o
Publikováno v:
Conference on Lasers and Electro-Optics.
We report a record-low threading dislocation density of 9.3 x105 cm-2 in GaAs thin films directly grown on (001) Si substrates. The total buffer thickness (2.4 pm) is only two thirds of the state-of-art reported value.
Autor:
John E. Bowers, Justin Norman, Jianan Duan, Bozhang Dong, Frédéric Grillot, Heming Huang, Daehwan Jung
Publikováno v:
APL Photonics
APL Photonics, AIP Publishing LLC, 2020, 5 (1), pp.016103. ⟨10.1063/1.5120029⟩
APL Photonics, Vol 5, Iss 1, Pp 016103-016103-10 (2020)
APL Photonics, AIP Publishing LLC, 2020, 5 (1), pp.016103. ⟨10.1063/1.5120029⟩
APL Photonics, Vol 5, Iss 1, Pp 016103-016103-10 (2020)
This work investigates the performance of 1.3-μm quantum dot lasers epitaxially grown on silicon under optical feedback sensitivity with different temperature and doping profiles. Experiments show that these quantum dot lasers exhibit a very high de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2108d6e8a49aaa0e763bbfc7f04f4d9b
https://hal.telecom-paris.fr/hal-02437868
https://hal.telecom-paris.fr/hal-02437868
Publikováno v:
OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF).
Traveling wave GaAs/AlGaAs modulators in epilayers directly grown on silicon are reported. Electrode is a loaded microstrip line shielding microwave fields from silicon substrate. Modulation bandwidth is 18.5 GHz with 1.5V-cm V π -L product.
Autor:
Chen Shang, Baile Chen, Yating Wan, Arthur C. Gossard, John E. Bowers, Zhiyang Xie, Kei May Lau, Jian Huang, Justin Norman, Qiang Li
Publikováno v:
Conference on Lasers and Electro-Optics.
We demonstrate an InAs quantum dot (QD) avalanche photodetectors (APD) monolithically grown on Si substrate working at 1300 nm. Low dark current and high gain were demonstrated for these QD APDs.
Autor:
Alfredo Torres, Daehwan Jung, Arthur C. Gossard, Songtao Liu, John E. Bowers, Justin Norman, Paolo Pintus, Minh A. Tran, Mario Dumont
Publikováno v:
2019 IEEE Photonics Conference (IPC).
We report the first demonstration of the O-band quantum dot semiconductor optical amplifier (QD-SOA) that is directly grown on CMOS compatible on-axis silicon substrate. The QD-SOA has a length of 3600 μm, tapered from 4 μm to 5.5 μm, which can of
Autor:
Mike Salmon, Daehwan Jung, Robert W. Herrick, Eammon Hughes, John E. Bowers, Justin Norman, Jennifer Selvidge, Kunal Mukherjee
Publikováno v:
2019 IEEE Photonics Conference (IPC).
Using correlated electron microscopy techniques, we characterize optoelectronic and structural properties of dislocation in InAs quantum dots (QD) structures. Results indicate that although dislocations significantly affect QD luminescence, the rate