Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Shun Ito"'
Publikováno v:
The Journal of Physical Chemistry Letters. 12:10417-10421
The role of alkynyl ligands with electron-withdrawing nature in the stability of metal clusters was investigated by gas-phase anion photoelectron spectroscopy (PES) on heteroleptic cluster anions [PdAu24(C≡CArF)18-x(C≡CPh)x]2- (ArF = 3,5-(CF3)2C6
Publikováno v:
The Journal of Physical Chemistry Letters. 10:6892-6896
A series of homoleptic alkynyl-protected gold clusters Au22(C≡CR)18 were newly synthesized using 3-ethynylthiophene (ETP-H), phenylacetylene (PA-H), 3-ethynyltoluene (ET-H), and 3-ethynylanisole (EA-H). Single-crystal X-ray diffraction analysis on
Publikováno v:
Superlattices and Microstructures. 99:182-185
Nb-doped SrTiO 3 showed interesting resistive switching phenomena, which could be modulated by either thermal treatment or doping level. The impacts of oxygen vacancies and dislocations on resistive switching were investigated by comparing the switch
Autor:
Yukio Yasui, Hiroki Taniguchi, Reiji Kumai, Kensuke Kobayashi, Shinichiro Asai, Shun Ito, Hironori Nakao, Ichiro Terasaki, Youichi Murakami, Ryuji Okazaki, Taichi Igarashi
Publikováno v:
Crystals, Vol 6, Iss 3, p 27 (2016)
Crystals; Volume 6; Issue 3; Pages: 27
Crystals; Volume 6; Issue 3; Pages: 27
We have prepared polycrystalline samples of the trimer Ir oxide BaIrO3 with face-shared Ir3O12 trimers, and have investigated the origin of the phase transition at 182 K by measuring resistivity, thermopower, magnetization and synchrotron x-ray diffr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52763c1ba243ad0023f57250fedf0596
Publikováno v:
Materials Science Forum. 725:157-160
Small angle grain boundaries (SA-GBs) are known as the most electrically active defects in multicrystalline silicon. These SA-GBs are classified in “general” and “special” by the normal and strong electrical activity at 300K, respectively. In
Publikováno v:
Materials Science Forum. :717-722
Mullite (3Al2O3•2SiO2) undergoes a phase transition at 30 GPa with forming aligned nanocrystalline fragments in an amorphous phase. The direction of the crystal axes of mullite nanocrystals with the grain sizes less than 10 nm is that preserved fro
Publikováno v:
Crystal Growth & Design. 9:1698-1701
The strains of bond lengths and lattice in GaN/ultrathin InN/GaN quantum wells are modified by varying the well and barrier thickness. Inspection of position-dependent densities of state (DOS) calculated by ab initio simulations shows that this tunab
Publikováno v:
Solid State Phenomena. :9-14
The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed
Publikováno v:
Materials Science in Semiconductor Processing. 9:15-18
Dislocation semi-loops in the lateral epitaxial region of GaN have been observed and characterized using transmission electron microscopy. The loops are not coplanar in a (0 0 0 1) close-packed plane and the motion of vertical glide is found. The Bur
Autor:
Parhat Ahmet, R. Xie, Deren Yang, Takashi Sekiguchi, Toyohiro Chikyo, Shun Ito, Jun Chen, Fuxing Yin
Publikováno v:
Scripta Materialia. 52:1211-1215
Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were we