Zobrazeno 1 - 10
of 14
pro vyhledávání: '"G. Cautero"'
Autor:
Giorgio Biasiol, Fulvia Arfelli, G. Cautero, A. Pilotto, C. Nichetti, T. Steinhartova, David Esseni, M. Antonelli, Francesco Driussi, R.H. Menk, Luca Selmi, Pierpaolo Palestri
Publikováno v:
Solid-state electronics 168 (2020). doi:10.1016/j.sse.2019.107728
info:cnr-pdr/source/autori:Pilotto, A.; Nichetti, C.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Esseni, D.; Menk, R. H.; Steinhartova, T./titolo:Optimization of GaAs%2FAlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization/doi:10.1016%2Fj.sse.2019.107728/rivista:Solid-state electronics/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:168
info:cnr-pdr/source/autori:Pilotto, A.; Nichetti, C.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Esseni, D.; Menk, R. H.; Steinhartova, T./titolo:Optimization of GaAs%2FAlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization/doi:10.1016%2Fj.sse.2019.107728/rivista:Solid-state electronics/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:168
A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while accounting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94b791e9eb224e4ef0594521a83538b8
https://hdl.handle.net/11380/1206544
https://hdl.handle.net/11380/1206544
Autor:
Miltcho B. Danailov, Fulvia Arfelli, Luca Selmi, C. Nichetti, Francesco Driussi, Pierpaolo Palestri, T. Steinhartova, G. Cautero, M. Antonelli, D. De Angelis, R.H. Menk, A. Pilotto, Giorgio Biasiol
Publikováno v:
Journal of instrumentation 15 (2020). doi:10.1088/1748-0221/15/02/C02013
info:cnr-pdr/source/autori:Nichetti, C.; Steinhartova, T.; Antonelli, M.; Biasiol, G.; Cautero, G.; De Angelis, D.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Arfelli, F.; Danailov, M.; Menk, R. H./titolo:Effects of p doping on GaAs%2FAlGaAs SAM-APDs for X-rays detection/doi:10.1088%2F1748-0221%2F15%2F02%2FC02013/rivista:Journal of instrumentation/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:15
info:cnr-pdr/source/autori:Nichetti, C.; Steinhartova, T.; Antonelli, M.; Biasiol, G.; Cautero, G.; De Angelis, D.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Arfelli, F.; Danailov, M.; Menk, R. H./titolo:Effects of p doping on GaAs%2FAlGaAs SAM-APDs for X-rays detection/doi:10.1088%2F1748-0221%2F15%2F02%2FC02013/rivista:Journal of instrumentation/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:15
This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::532643016e915d8f8b7fcfb4eb52b1f7
http://www.cnr.it/prodotto/i/435663
http://www.cnr.it/prodotto/i/435663
Autor:
Pierpaolo Palestri, Giorgio Biasiol, M. Antonelli, C. Nichetti, Luca Selmi, Fulvia Arfelli, G. Cautero, A. Pilotto, D. De Angelis, F. Rosset, R.H. Menk, T. Steinhartova, Francesco Driussi
Publikováno v:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 977 (2020). doi:10.1016/j.nima.2020.164346
info:cnr-pdr/source/autori:Rosset, F.; Pilotto, A.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; De Angelis, D.; Driussi, F.; Menk, R. H.; Nichetti, C.; Steinhartova, T.; Palestri, P./titolo:A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions/doi:10.1016%2Fj.nima.2020.164346/rivista:NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:977
info:cnr-pdr/source/autori:Rosset, F.; Pilotto, A.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; De Angelis, D.; Driussi, F.; Menk, R. H.; Nichetti, C.; Steinhartova, T.; Palestri, P./titolo:A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions/doi:10.1016%2Fj.nima.2020.164346/rivista:NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:977
An improved version of the Random Path Length algorithm is used to simulate the time response of Separate Absorption and Multiplication Avalanche PhotoDiodes (SAM-APDs) in the linear regime. The model takes into account both the diffusion and the dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a792a79b8459b1f3fb73b8dcd13f7a9
https://hdl.handle.net/11380/1206561
https://hdl.handle.net/11380/1206561
Publikováno v:
Journal of instrumentation 14 (2019). doi:10.1088/1748-0221/14/01/C01014
info:cnr-pdr/source/autori:Ganbold T.; Antonelli M.; Biasiol G.; Nichetti C.; Cautero G.; Menk R.H./titolo:Double-side pixelated X-ray detector based on metamorphic InGaAs%2FInAlAs quantum well/doi:10.1088%2F1748-0221%2F14%2F01%2FC01014/rivista:Journal of instrumentation/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
info:cnr-pdr/source/autori:Ganbold T.; Antonelli M.; Biasiol G.; Nichetti C.; Cautero G.; Menk R.H./titolo:Double-side pixelated X-ray detector based on metamorphic InGaAs%2FInAlAs quantum well/doi:10.1088%2F1748-0221%2F14%2F01%2FC01014/rivista:Journal of instrumentation/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
Due to the high atomic number, low band gap and high electron mobility of III-IV semiconductors, the use of metamorphic InGaAs/InAlAs quantum well-based devices was proposed for fast pixelated photon detectors. In this work, we are presenting a doubl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::014a6ae7d818680f11c15116b37cb9bb
Autor:
Luca Selmi, C. Nichetti, Pierpaolo Palestri, G. Cautero, Fulvia Arfelli, T. Steinhartova, M. Antonelli, Giorgio Biasiol, Francesco Driussi, A. Pilotto, R.H. Menk
Publikováno v:
Journal of instrumentation 14 (2019). doi:10.1088/1748-0221/14/01/C01003
info:cnr-pdr/source/autori:Nichetti C.; Steinhartova T.; Antonelli M.; Cautero G.; Menk R.H.; Pilotto A.; Driussi F.; Palestri P.; Selmi L.; Arfelli F.; Biasiol G./titolo:Gain and noise in GaAs%2FAlGaAs avalanche photodiodes with thin multiplication regions/doi:10.1088%2F1748-0221%2F14%2F01%2FC01003/rivista:Journal of instrumentation/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
info:cnr-pdr/source/autori:Nichetti C.; Steinhartova T.; Antonelli M.; Cautero G.; Menk R.H.; Pilotto A.; Driussi F.; Palestri P.; Selmi L.; Arfelli F.; Biasiol G./titolo:Gain and noise in GaAs%2FAlGaAs avalanche photodiodes with thin multiplication regions/doi:10.1088%2F1748-0221%2F14%2F01%2FC01003/rivista:Journal of instrumentation/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
Avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multi- plication regions (SAM-APDs) will be discussed in terms of capacitance, response to light (gain and noise) and time response. The structures have been fabricated by molec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1d33a3e496d611a0c7fb30f06dc9fa8
https://hdl.handle.net/11380/1169426
https://hdl.handle.net/11380/1169426
Autor:
Giorgio Biasiol, T. Steinhartova, R.H. Menk, Francesco Driussi, David Esseni, Fulvia Arfelli, A. Pilotto, M. Antonelli, Pierpaolo Palestri, Luca Selmi, C. Nichetti, G. Cautero
Publikováno v:
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble (FR), 2019
info:cnr-pdr/source/autori:Pilotto A.; Esseni D.; Menk R.H.; Steinhartova T.; Nichetti C.; Palestri P.; Selmi L.; Antonelli M.; Arfelli F.; Biasiol G.; Cautero G.; Driussi F./congresso_nome:2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)/congresso_luogo:Grenoble (FR)/congresso_data:2019/anno:2019/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:Pilotto A.; Esseni D.; Menk R.H.; Steinhartova T.; Nichetti C.; Palestri P.; Selmi L.; Antonelli M.; Arfelli F.; Biasiol G.; Cautero G.; Driussi F./congresso_nome:2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)/congresso_luogo:Grenoble (FR)/congresso_data:2019/anno:2019/pagina_da:/pagina_a:/intervallo_pagine
We report simulation results for gain and noise in avalanche photodiodes fabricated using heterojunctions of III-V compound semiconductors. We employ a recently developed nonlocal model for impact ionization. The model has been calibrated and validat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69efd47e579404bf329206525b37471d
https://hdl.handle.net/11380/1200316
https://hdl.handle.net/11380/1200316
Autor:
G. Cautero, S. Nannarone, Giorgio Biasiol, Fulvia Arfelli, K. Koshmak, C. Nichetti, Luca Selmi, A. Pilotto, T. Steinhartova, Francesco Driussi, Pierpaolo Palestri, M. Antonelli, R.H. Menk, S. Dal Zilio
Publikováno v:
Journal of instrumentation 12 (2017). doi:10.1088/1748-0221/12/11/C11017
info:cnr-pdr/source/autori:Steinhartova T.; Nichetti C.; Antonelli M.; Cautero G.; Menk R.H.; Pilotto A.; Driussi F.; Palestri P.; Selmi L.; Koshmak K.; Nannarone S.; Arfelli F.; Zilio S.D.; Biasiol G./titolo:Influence of ? p-doping on the behaviour of GaAs%2FAlGaAs SAM-APDs for synchrotron radiation/doi:10.1088%2F1748-0221%2F12%2F11%2FC11017/rivista:Journal of instrumentation/anno:2017/pagina_da:/pagina_a:/intervallo_pagine:/volume:12
info:cnr-pdr/source/autori:Steinhartova T.; Nichetti C.; Antonelli M.; Cautero G.; Menk R.H.; Pilotto A.; Driussi F.; Palestri P.; Selmi L.; Koshmak K.; Nannarone S.; Arfelli F.; Zilio S.D.; Biasiol G./titolo:Influence of ? p-doping on the behaviour of GaAs%2FAlGaAs SAM-APDs for synchrotron radiation/doi:10.1088%2F1748-0221%2F12%2F11%2FC11017/rivista:Journal of instrumentation/anno:2017/pagina_da:/pagina_a:/intervallo_pagine:/volume:12
This work focuses on the development and the characterization of avalanche photodiodes with separated absorption and multiplication regions grown by molecular beam epitaxy. The i-GaAs absorption region is separated from the multiplication region by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67d907c1e0eb9fe4a76b50d0f435d7e2
http://hdl.handle.net/11368/2917692
http://hdl.handle.net/11368/2917692
Autor:
P. O'Keeffe a, V. Feyer b, P. Bolognesi a, M. Coreno a, C. Callegari b, G. Cautero b, A. Moise b, K.C. Prince b, c, R. Richter b, R. Sergo b, M. Alagia c, M. de Simone c, A. Kivimäki c, M. Devetta d, T. Mazza d, P. Piseri d, V. Lyamayev e, R. Katzy e, F. Stienkemeier e, Y. Ovcharenko f, T. Möller f, L. Avaldi a
Publikováno v:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
284 (2012): 69–73. doi:10.1016/j.nimb.2011.07.020
info:cnr-pdr/source/autori:P. O'Keeffe a, V. Feyer b, P. Bolognesi a, M. Coreno a, C. Callegari b, G. Cautero b, A. Moise b, K.C. Prince b,c, R. Richter b, R. Sergo b, M. Alagia c, M. de Simone c, A. Kivimäki c, M. Devetta d, T. Mazza d, P. Piseri d, V. Lyamayev e, R. Katzy e, F. Stienkemeier e, Y. Ovcharenko f, T. Möller f, L. Avaldi a/titolo:A velocity map imaging apparatus for gas phase studies at FERMI@Elettra/doi:10.1016%2Fj.nimb.2011.07.020/rivista:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)/anno:2012/pagina_da:69/pagina_a:73/intervallo_pagine:69–73/volume:284
284 (2012): 69–73. doi:10.1016/j.nimb.2011.07.020
info:cnr-pdr/source/autori:P. O'Keeffe a, V. Feyer b, P. Bolognesi a, M. Coreno a, C. Callegari b, G. Cautero b, A. Moise b, K.C. Prince b,c, R. Richter b, R. Sergo b, M. Alagia c, M. de Simone c, A. Kivimäki c, M. Devetta d, T. Mazza d, P. Piseri d, V. Lyamayev e, R. Katzy e, F. Stienkemeier e, Y. Ovcharenko f, T. Möller f, L. Avaldi a/titolo:A velocity map imaging apparatus for gas phase studies at FERMI@Elettra/doi:10.1016%2Fj.nimb.2011.07.020/rivista:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)/anno:2012/pagina_da:69/pagina_a:73/intervallo_pagine:69–73/volume:284
The design and evaluation of a velocity map imaging spectrometer specifically optimised for experiments at the FERMI free electron laser source are described. Optimisation of the set-up for the detection of high energy electrons (experimentally calib
Autor:
M. Antonelli, C. Castellaro, Ralph H Menk, Tamiraa Ganbold, G. Cautero, Giorgio Biasiol, R. Sergo
Publikováno v:
12TH INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION, New York (US), 2015
info:cnr-pdr/source/autori:Antonelli M.; Ganbold T.; Biasiol G.; Cautero G.; Sergo R.; Castellaro C.; Menk R.H./congresso_nome:12TH INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION/congresso_luogo:New York (US)/congresso_data:2015/anno:2016/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:Antonelli M.; Ganbold T.; Biasiol G.; Cautero G.; Sergo R.; Castellaro C.; Menk R.H./congresso_nome:12TH INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION/congresso_luogo:New York (US)/congresso_data:2015/anno:2016/pagina_da:/pagina_a:/intervallo_pagine
The recent evolution of free-electron lasers has not been matched by the development of adequate beam-monitoring instrumentation. However, for both experimental and diagnostics purposes, it is crucial to keep such photon beams under control, avoiding
Autor:
Dario Giuressi, Jernej Bufon, Andrea Stolfa, Claudio Piemonte, Andrea Castoldi, A. Rachevski, G. Zampa, Sergio Fabiani, Nicola Zorzi, Alessandra Gianoncelli, Elena Brigo, Ralf Hendrik Menk, Sergio Carrato, Gabriele Giacomini, Irina Rashevskaya, N. Zampa, Pierluigi Bellutti, Chang Liu, G. Cautero, Yongbiao Shi, Giuseppe Bertuccio, M. Ahangarianabhari, Giuseppe Vito Montemurro, Antonino Picciotto, George Kourousias, Chiara Guazzoni, Andrea Vacchi
We developed a trapezoidal shaped matrix with 8 cells of Silicon Drift Detectors (SDD) featuring a very low leakage current (below 180 pA/cm2 at 20 °C) and a shallow uniformly implanted p+ entrance window that enables sensitivity down to few hundred
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f09cb46da3447ad093575ad40ab9790c
http://hdl.handle.net/11390/1126117
http://hdl.handle.net/11390/1126117