Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Fuei Pien Chee"'
Publikováno v:
Radiation Physics and Chemistry. 184:109455
In space, semiconductor devices are vulnerable to various effect of high energy radiation, causing single event upsets (SEUs), damaging or altering the lattice structure of the semiconductor device. The effect of ionizing radiation on metal oxide sem
Publikováno v:
Advanced Science Letters. 23:1416-1421
Irradiation impact of gamma rays and X-rays on bipolar junction transistors (BJTs) in terms of electronic excitation due to transfer of energy and subsequent ionization, as well as energy transfer to atomic nuclei is studied using in-situ method. Com
Publikováno v:
Advanced Science Letters. 23:1337-1339
Poly(triarylamine) is one of the well-known organic materials and has several advantaged such as stable in ambient and require low-temperature annealing steps. A series of PTAA thin films were deposited at 1000 rpm to 3000 rpm on a glass substrate by
Autor:
Afishah Alias, D S Mivolil, Khairul Anuar, Saafie Salleh, Fuei Pien Chee, Khairul Anuar Mohd Salleh, Rosfayanti Rasmidi, Abi Muttaqin Jalal Bayar, Mivolil Duinong
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:045019
In this research, n-ZnO/p-CuGaO2 based semiconductor devices were fabricated and exposed to gamma rays with increasing total ionizing dose (TID) and neutron fluence at different flux. Based on the I-V properties, the decrease in the turn-on voltage o
Autor:
Mohd Shahril Osman, Abdul Ismail Abdul Rani, Ismail Saad, Fuei Pien Chee, Khairul Anuar Mohamad, Ghosh Bablu Kumar
Publikováno v:
Journal of Physics: Conference Series. 1358:012045
Zinc Oxide (ZnO) thin films have been deposited onto an ITO glass by RF sputtering method in a controlled condition followed by a layer of Poly(triarylamine) as an electron acceptor to form a hybrid-heterojunction thin film. In this work, Poly(triary
Autor:
Fuei Pien Chee, Haider F. Abdul Amir
Publikováno v:
Advanced Materials Research. 1108:79-84
Silicon is always the dominant semiconductor material of the modern semiconductor industry. This is as silicon can retain its semiconductor characteristics even at a higher temperature while the other semiconductor materials can't. However, when a si
Publikováno v:
AIP Conference Proceedings.
Radiation effects on Gallium Arsenide (GaAs) have been tested by exposing samples to Cesium-137 (137Cs) gamma rays. Gallium Arsenide is a basic photonic material for most of the space technology communication, and, therefore, lends itself for applica
Publikováno v:
IOSR Journal of Applied Physics. 6:92-101
This paper reviews typical effects occurring in bipolar junction transistors (BJTs) due to gamma (γ) rays irradiation. The detrimental consequences of this interaction can be categorized into two: the transfer of energy to electrons due to ionizatio
Autor:
Fuei Pien Chee, Haider F. Abdul Amir
Publikováno v:
Advanced Materials Research. 701:71-76
Electronic device that subjected to various effects by radiations can cause small interferences such as noises in the circuit. These effects are especially critical in operating environment such as outer space, where radiation comes in stronger and m
Publikováno v:
AIP Conference Proceedings.
Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by