Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Alex Paterson"'
Autor:
Maria Davies, Shelley Allen-Birt, Alex Paterson, Nicola X West, David C Emery, Tanya L Cerajewska, Joon Seong
Publikováno v:
Emery, D C, Cerajewska, T L, Seong, J, Davies, M, Paterson, A, Allen-Birt, S J & West, N X 2021, ' Comparison of Blood Bacterial Communities in Periodontal Health and Periodontal Disease ', Frontiers in Cellular and Infection Microbiology, vol. 10, 577485 . https://doi.org/10.3389/fcimb.2020.577485
Frontiers in Cellular and Infection Microbiology
Frontiers in Cellular and Infection Microbiology, Vol 10 (2021)
Frontiers in Cellular and Infection Microbiology
Frontiers in Cellular and Infection Microbiology, Vol 10 (2021)
The use of Next Generation Sequencing (NGS) techniques has generated a wide variety of blood microbiome data. Due to the large variation in bacterial DNA profiles between studies and the likely high concentrations of cell-free bacterial DNA in the bl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e652f934156b21316c7e6f2cf7185c45
https://research-information.bris.ac.uk/ws/files/261557297/fcimb_10_577485.pdf
https://research-information.bris.ac.uk/ws/files/261557297/fcimb_10_577485.pdf
Publikováno v:
Journal of Vacuum Science & Technology A. 36:06B101
The mechanism for atomic layer etching (ALE) typically consists of two sequential self-limited half-reactions—passivation and ion bombardment—which provide unique control over the process. Some of the possible benefits of this control include inc
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
One of the key challenges of deep Si etch is feature control versus high etch rate. Scallop sizes increase with increased etch rate and uniformity degrades. This paper provides an overview of an enhanced rapid alternating process (RAP) in combination
Publikováno v:
Plasma Sources Science and Technology. 15:889-899
There is much interest in scaling rf-excited capacitively coupled plasma reactors to larger sizes and to higher frequencies. As the size approaches operating wavelength, concerns arise about non-uniformity across the work piece, particularly in light
Autor:
Mark J. Kushner, Alex Paterson, Keren J. Kanarik, Yiting Zhang, Chad M. Huard, Saravanapriyan Sriraman
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:031306
Current (and future) microelectronics fabrication requirements place unprecedented demands on the fidelity of plasma etching. As device features shrink to atomic dimensions, the plasma etching processes used to define these devices must resolve these
Autor:
Jun Belen, Chad M. Huard, Saravanapriyan Sriraman, Mark J. Kushner, Alex Paterson, Yiting Zhang
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:021303
Pattern transfer in microelectronics fabrication using plasma-assisted etching processes is being challenged by the three-dimensional (3d) structures of devices such as fin field effect transistors. Etching of 3d structures typically requires a longe
Publikováno v:
IEEE Transactions on Plasma Science. 37:1662-1664
The 12 papers in this special issue focus on surface interactions, plasma chemistry, and particle behavior near the surface.
Autor:
Alex Paterson, Saravanapriyan Sriraman, Alexei Marakhtanov, Yiting Zhang, John Holland, Mark J. Kushner
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:031302
Anisotropic etching, enabled by energetic ion bombardment, is one of the primary roles of plasma–assisted materials processing for microelectronics fabrication. One challenge in plasma etching is being able to control the ion energy-angular distrib
Autor:
Paul A. Miller, John Holland, Gregory A. Hebner, Alex Paterson, Thorsten Lill, Edward V. Barnat
Publikováno v:
IEEE Conference Record - Abstracts. 2005 IEEE International Conference on Plasma Science.
Summary form only given. We have investigated the characteristics of VHF capacitively coupled plasmas produced in a modified applied materials chamber. The chamber had a 14-inch diameter upper electrode (source) that was driven at 10 to 160 MHz and a
Publikováno v:
Plasma Sources Science and Technology. 17:045005
We examine the effects of an externally applied magnetic field (0–150 G) on an argon discharge generated capacitively at 13.56 MHz, in a Gaseous Electronics Conference reference cell. Dependence of the electrical characteristics of the discharge ar