Zobrazeno 1 - 10
of 74
pro vyhledávání: '"ZHAO LI"'
Largely Enhanced Mobility of MoS2 Field-Effect Transistors by Optimizing O2-Plasma Treatment on MoS2
Publikováno v:
IEEE Transactions on Electron Devices. 68:4614-4617
2-D layered MoS2 is considered as a promising candidate for novel nanoelectronic devices in recent years. However, a large number of structural defects in MoS2 have been widely reported, which will greatly degrade the electrical performance of MoS2 d
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:23923-23934
SWCNT-based thin-film transistors (TFTs) typically display unipolar p-type electrical characteristics in ambient condition due to the O₂/H₂O redox couple. However, complementary circuits that combine both p and n channels are preferred due to low
Publikováno v:
Journal of Materials Chemistry C. 9:13432-13438
Chromium (Cr), located in the subgroup VIB of the periodic table of elements, is widely known as the hardest metal in nature with a high polish and high melting point with an atomic number 24. In the past years, researches on the optical nonlinear be
Autor:
Xue-Jie Zhao, Yu-Fang Wu, Kuan Jiang, Te Xu, Chang-Qing Jing, Nian-Ting Xue, Xiao-Wu Lei, Zhihong Jing, Jing-Zhao Li
Publikováno v:
CrystEngComm. 23:292-298
Recently, low-dimensional organic–inorganic hybrid metal halides have attracted considerable attention in solid-state optical application fields, especially in white-light emitting diodes (WLEDs) owing to intrinsic broadband luminescence performanc
Autor:
Yanguang Zhang, Jianping Lu, Ta-Ya Chu, Neil Graddage, Ye Tao, Zhao Li, Jianying Ouyang, Xiaohua Wu, Patrick R. L. Malenfant
Publikováno v:
ACS Applied Nano Materials. 3:12209-12217
Biosensing applications are driving an increase in demand for low-cost photodetectors with sensitivity between 1000 and 1400 nm. Recently, the sensitivity of Ag2Se colloidal quantum dot based devic...
Publikováno v:
International Journal of Microwave and Wireless Technologies. 13:322-334
This paper presents the design of frequency-tunable dual-band, tri-band and quad-band bandpass filters (BPFs). The proposed three BPFs can be independently tuned and individually switched by varying the capacitances of the varactors. In the designed
Publikováno v:
IEEE Electron Device Letters. 41:1364-1367
The effects of NH3-plasma treating HfO2 gate dielectric on electrical characteristics of top-gate (TG) MoS2 FETs are investigated. The experimental results show that the increase of off-state current after growing HfO2 top-gate dielectric can be cons
Autor:
Ning Jiang, Junshan Xiu, Huiqiang Liu, Yunyan Liu, Zhao Li, Gongxiang Wei, Shutao Li, Pengfei Wang, Rendong Wang, Mianzeng Zhong
Publikováno v:
ACS Applied Materials & Interfaces. 12:41919-41931
All-inorganic cesium lead-halide perovskites exhibit a great development prospect in optoelectronic devices owing to their stability and remarkable optoelectronic properties. Herein, we investigate...
Autor:
Guang C. Yuan, Shi Shu, Zhao Li, Hai T. Huang, Hui L. Wu, Qi Yao, Tie S. Wang, Chuan X. Xu, Dong H. Wang, Jin X. Xue, Shuang Sun
Publikováno v:
SID Symposium Digest of Technical Papers. 51:1811-1814
Publikováno v:
Coatings, Vol 11, Iss 389, p 389 (2021)
Coatings
Volume 11
Issue 4
Coatings
Volume 11
Issue 4
γ-phase aluminum oxide (γ-Al2O3) films are grown on MgO (100) wafers by metal organic chemical vapor deposition (MOCVD). Post-annealing process is conducted to study the influence of annealing temperature on the properties of the films. Structural