Zobrazeno 1 - 10
of 130
pro vyhledávání: '"Youguang Zhang"'
Publikováno v:
IEEE Transactions on Magnetics. 57:1-4
In the era of big data, the memory wall between the processor and the memory as well as leakage current have become major bottlenecks of the traditional CMOS-based Von-Neumann computer architecture. Computing-in-memory (CiM) based on non-volatile mem
Autor:
Youguang Zhang, Ying Wang, Chao Wang, Deming Zhang, Bi Wu, Dijun Liu, Zhaohao Wang, Xiaobo Sharon Hu
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 67:4660-4669
Continued scaling of Complementary Metal Oxide Semiconductor (CMOS) integrated circuit technology is slowing down due to physical limitations, while the static power of CMOS based memory is increasing as the transistors shrink. As an alternative memo
Autor:
Youguang Zhang, Shishen Yan, Yue Zhang, Wenlong Cai, Guanda Wang, Jiang Nan, Zhe Huang, Kaihua Cao, Kun Zhang, Weisheng Zhao, Jinkai Wang, Zhizhong Zhang, Zhenyi Zheng, Lei Chen
Publikováno v:
IEEE Electron Device Letters. 41:928-931
Low on/off ratio gravely hinders the application of magnetoresistance (MR) devices for the accurate and reliable data fetch. In this paper, a rectified tunnel MR (R-TMR) device is fabricated by integrating perpendicular-magnetic-anisotropy magnetic t
Autor:
You Wang, Lang Zeng, Chengzhi Wang, Youguang Zhang, Deming Zhang, Weisheng Zhao, Zhengyi Hou, Kaili Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 67:1965-1971
This article proposes two different magnetic nonvolatile-static random access memory (MNV-SRAM) cell circuits for low-power, high-speed, and high-reliable backup operation with a compact cell area. They employ perpendicular magnetic tunnel junctions
Autor:
Shaohua Yan, Zhenyi Zheng, Qunwen Leng, Kun Zhang, Yue Zhang, Guanda Wang, Zhizhong Zhang, Jiang Nan, Youguang Zhang, Weisheng Zhao
Publikováno v:
IEEE Access, Vol 8, Pp 87584-87591 (2020)
Magnetoresistance (MR) effects have been intensively investigated and widely recognized as an effective path for realizing information sensing, storage, and processing. In particular, giant MR (GMR) effect discovered in ferromagnetic/nonmagnetic mult
Autor:
Ying Wang, Pengcheng Dai, Weisheng Zhao, Youguang Zhang, Chao Wang, Jianlei Yang, Yuanqing Cheng, Bi Wu, Dijun Liu, Zhaohao Wang, Xiaobo Sharon Hu
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 67:108-120
High capacity last-level caches (LLCs) are being used to help alleviate the growing speed gap between the processor and main memory. However, traditional CMOS based memory technologies (SRAM, DRAM, et al.) for such LLCs consume high static power. Non
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:2668-2679
Convolution neural networks (CNNs) have demonstrated superior capability in computer vision, speech recognition, autonomous driving, and so forth, which are opening up an artificial intelligence (AI) era. However, conventional CNNs require significan
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:2046-2059
Emerging nonvolatile memories (NVMs), including resistive RAM (RRAM), phase-change memory (PCM), and magnetic RAM (MRAM), have opened up new pathways for Computing-In-Memory (CIM). Those NVM technologies can achieve energy-efficient computational ope
Publikováno v:
ISCAS
With the surge in demand for data storage and processing in emerging applications, the traditional CMOS-based Von-Neumann architecture is facing challenges such as memory wall and static power consumption. In order to conquer the above-mentioned bott
Autor:
Youguang Zhang, You Wang, Wang Xian, Deming Zhang, Bi Wang, Chuanjie Wang, Erya Deng, Weisheng Zhao, Lang Zeng, Peng Wu, Kaili Zhang
Publikováno v:
ISCAS
Benefitting from its non-volatility, high speed, low power and inherent radiation hardened characteristic, magnetic random access memory (MRAM) has been used in aerospace and avionic electronics. Owing to its high sensing reliability, precharge diffe