Zobrazeno 1 - 10
of 107
pro vyhledávání: '"Jingzhen Li"'
Autor:
Gaokai Wang, Junhua Meng, Jinliang Wu, Ji Jiang, Peng Jin, Jingzhen Li, Yan Tian, Jingren Chen, Zhigang Yin, Xingwang Zhang
Publikováno v:
Fundamental Research. 1:677-683
Recently, hexagonal boron nitride (h-BN), an ultra-wide bandgap semiconductor, has attracted considerable attention owing to its excellent properties. In thin films grown on metal catalysts, contamination and damage induced by a transfer process cann
Autor:
Jichao Dong, Hao Tang, Feng Pan, Yangyang Wang, Jinbo Yang, Ying Li, Jing Lu, Linqiang Xu, Ying Guo, Lin Xu, Zhiyong Zhang, Qiuhui Li, Han Zhang, Yuanyuan Pan, Chen Yang, Ming Lei, Jie Yang, Jingzhen Li, Bowen Shi, Xiaotian Sun, Mouyi Weng, Shiqi Liu, Ruge Quhe, Hong Li
Publikováno v:
Physics Reports. 938:1-72
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and further scaling their gate length down to the sub-10 nm region is becoming extremely difficult. Benefitting from the atomic-scale thickness and dangling-bond
Autor:
Linqiang Xu, Chen Yang, Jiachen Ma, Ying Li, Jingzhen Li, Jie Yang, Feng Pan, Jing Lu, Shiqi Liu, Xiuying Zhang, Dapeng Yu, Shibo Fang, Xiaotian Sun, Xiaoyu Yang, Qiuhui Li
Publikováno v:
Carbon. 176:242-252
Nowadays, the development of promising anodes for Na and K ion batteries (NIB and KIB) has got great attention due to their sustainable and renewable energy applications. Graphite is a good candidate but suffers from low Na (
Autor:
Linqiang Xu, Han Zhang, Jie Yang, Shiqi Liu, Xiaotian Sun, Jiahuan Yan, Jingzhen Li, Xiuying Zhang, Chen Yang, Lianqiang Xu, Jing Lu, Bowen Shi
Publikováno v:
Physical Chemistry Chemical Physics. 22:7853-7863
Monolayer (ML) MoS2 is one of the most extensively studied two-dimensional (2D) semiconductors. However, it suffers from low carrier mobility and pervasive Schottky contact with metal electrodes. 2D semiconductor Bi2O2S, a sulfur analogue of 2D Bi2O2
Publikováno v:
ACS Applied Electronic Materials. 1:2103-2108
Two-dimensional (2D) semiconductors are expected to be suitable channel materials for next-generation transistors because of their ultrathin thickness and smooth surface. Monolayer (ML) BiH (bismut...
Autor:
Yang Yang, Qifan Zhu, Shixiang Xu, Yongle Zhu, Xiaowei Lu, Liangwei Zeng, Yi Cai, Jingzhen Li, Xuanke Zeng, Tingchao He, Maijie Zheng, Junzi Li
Publikováno v:
Optics express. 29(17)
A novel single-shot ultrafast all-optical photography with raster principle (OPR) that can capture real-time imaging of ultrafast phenomena is proposed and demonstrated. It consists of a sequentially timed module (STM), spectral-shaping module (SSM),
Autor:
Qingqing Ji, Jiangtao Wang, Tomas Palacios, Jing Kong, Jing Lu, Dan Xie, Jingzhen Li, Yilin Sun, Huayan Si, Yuxuan Lin, Mengxing Sun, Ming-Hui Chiu, Cong Su
Publikováno v:
Physical Review Materials. 5
Trichalcogenide semiconductors could provide a platform for quasi-one-dimensional electronic devices, on condition that their tunable doping capability is established. This work presents a synthetic strategy towards degenerately doped titanium trisul
Autor:
Jie Yang, Jinbo Yang, Ying Li, Bowen Shi, Jing Lu, Lin Xu, Yuanyuan Pan, Shiqi Liu, Chen Yang, Linqiang Xu, Jingzhen Li, Jiachen Ma
Publikováno v:
Nanoscale. 13(10)
Fin field-effect transistors (FinFETs) dominate the present Si FETs. However, when the gate length is scaled down to the sub-10 nm region, the experimental Si FinFETs suffer from poor performance due to a large fin width (the minimum value is 3 nm).
Autor:
Hong Li, Jinbo Yang, Linqiang Xu, Bowen Shi, Yuanyuan Pan, Jing Lu, Xiuying Zhang, Lianqiang Xu, Shiqi Liu, Jingzhen Li, Jie Yang, Jiahuan Yan
Publikováno v:
The Journal of Physical Chemistry C. 123:8923-8931
Due to their outstanding gate electrostatics, two-dimensional (2D) semiconducting materials are regarded as promising channel materials used in the next-generation field-effect transistors (FETs). ...
Autor:
Jingzhen Li, Ren-Min Ma, Jing Lu, Xiaowei Zhang, Yu-Min Hou, Yifei Mao, Zhen-Qian Yang, Yu-Hao Deng
Publikováno v:
Journal of Materials Chemistry A. 7:13305-13314
Lead halide perovskites have recently emerged as groundbreaking photovoltaic materials due to their low-cost, solution-processed fabrication and extraordinary performance. Despite the rapid improvement in efficiency, perovskite devices often suffer f