Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Makoto Kato"'
Publikováno v:
SSRN Electronic Journal.
New structural materials, such as carbon fiber reinforced plastic (CFRP), are used in modern machine tools for energy efficiency improvement by weight reduction. Furthermore, CFRP can manipulate thermal expansion with the fiber orientation, and this
Autor:
Makoto Kato, Junji Senzaki, Yusuke Kobayashi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, Megumi Shinozaki, Takahito Kojima, Mitsuru Sometani, Keiko Ariyoshi
Publikováno v:
Materials Science Forum. :769-772
3kV UMOSFET with buried p-base regions was developed to realize the low on-resistance with low electric field in the gate oxide for off-state. The buried p-base region was formed simultaneously with the p-base region by utilizing MeV ion implantation
Autor:
Shinsuke Harada, Kenji Fukuda, Junji Senzaki, Kenji Suzuki, Kazuo Arai, Makoto Kato, Sachiko Ito, Takasumi Ohyanagi, Hajime Okumura
Publikováno v:
Materials Science Forum. :549-552
Reliability of the gate oxide is influenced by the device structure and the processes. In the SiC MOSFET, the surface morphology is degraded by the high temperature activation RTA, and the degradation is remarkable on the n+ source region. This study
Publikováno v:
Materials Science Forum. :675-678
4H-SiC MOSFET on carbon face exhibits the high channel mobility when the gate oxide is formed by pyrogenic wet oxidation. However, this improvement is not proof against the metallization annealing which is indispensable in the fabrication of the SiC
Autor:
Makoto Kato, Shinsuke Harada, Tsutomu Yatsuo, Hajime Okumura, Atsushi Shimozato, Kazuto Takao, Tomohisa Kato, Shin Ichi Nishizawa, Kenji Fukuda, Yasunori Tanaka, Hiromichi Ohashi, Kenji Suzuki, Junji Senzaki, Kazu Kojima, Kazuo Arai, Yusuke Hayashi, Akimasa Kinoshita, Ryouji Kosugi, Mitsuo Okamoto
Publikováno v:
Materials Science Forum. :907-912
The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth surface. However, the DMOS type power MOSFETs on the C(000-1) face have not been realized because of the difficulty
Publikováno v:
Materials Science Forum. :1281-1284
The channel mobility in the SiC MOSFET degrades on the rough surface of the p-well formed by ion implantation. Recently, we have developed a double-epitaxial MOSFET (DEMOSFET), in which the p-well comprises two stacked epitaxially grown p-type layers
Publikováno v:
Materials Science Forum. :1043-1046
SiC power MOSFETs are expected to be normally-off type fast switching devices. The on-resistance of SiC power MOSFETs is much higher than the value predicted from the physical properties of SiC. This is caused by the low channel mobility due to high
Autor:
Kazuo Arai, Takatoshi Watanabe, Tetsuo Hatakeyama, Kenji Fukuda, Makoto Kato, Junji Senzaki, Takashi Shinohe
Publikováno v:
Materials Science Forum. :829-832
This paper reports on the degradation of inversion channel mobility of SiC MOSFET caused by the increase of channel doping. SiC MOSFETs were fabricated on three wafers, the doping concentrations of the epitaxial layer of which were 16 10 2× cm-3 (sa
Publikováno v:
Materials Science Forum. :805-808
We have fabricated lateral RESURF MOSFETs on 4H-SiC(0001) Si-face and (000-1) C-face substrates, and compared those properties. The channel mobility of a lateral test MOSFET on a C-face was 41 cm2/Vs, which was much higher than 5 cm2/Vs for that on a
Publikováno v:
Materials Science Forum. :1417-1420