Zobrazeno 1 - 7
of 7
pro vyhledávání: '"C. Nichetti"'
Autor:
Giorgio Biasiol, Fulvia Arfelli, G. Cautero, A. Pilotto, C. Nichetti, T. Steinhartova, David Esseni, M. Antonelli, Francesco Driussi, R.H. Menk, Luca Selmi, Pierpaolo Palestri
Publikováno v:
Solid-state electronics 168 (2020). doi:10.1016/j.sse.2019.107728
info:cnr-pdr/source/autori:Pilotto, A.; Nichetti, C.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Esseni, D.; Menk, R. H.; Steinhartova, T./titolo:Optimization of GaAs%2FAlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization/doi:10.1016%2Fj.sse.2019.107728/rivista:Solid-state electronics/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:168
info:cnr-pdr/source/autori:Pilotto, A.; Nichetti, C.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Esseni, D.; Menk, R. H.; Steinhartova, T./titolo:Optimization of GaAs%2FAlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization/doi:10.1016%2Fj.sse.2019.107728/rivista:Solid-state electronics/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:168
A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while accounting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94b791e9eb224e4ef0594521a83538b8
https://hdl.handle.net/11380/1206544
https://hdl.handle.net/11380/1206544
Autor:
Miltcho B. Danailov, Fulvia Arfelli, Luca Selmi, C. Nichetti, Francesco Driussi, Pierpaolo Palestri, T. Steinhartova, G. Cautero, M. Antonelli, D. De Angelis, R.H. Menk, A. Pilotto, Giorgio Biasiol
Publikováno v:
Journal of instrumentation 15 (2020). doi:10.1088/1748-0221/15/02/C02013
info:cnr-pdr/source/autori:Nichetti, C.; Steinhartova, T.; Antonelli, M.; Biasiol, G.; Cautero, G.; De Angelis, D.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Arfelli, F.; Danailov, M.; Menk, R. H./titolo:Effects of p doping on GaAs%2FAlGaAs SAM-APDs for X-rays detection/doi:10.1088%2F1748-0221%2F15%2F02%2FC02013/rivista:Journal of instrumentation/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:15
info:cnr-pdr/source/autori:Nichetti, C.; Steinhartova, T.; Antonelli, M.; Biasiol, G.; Cautero, G.; De Angelis, D.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Arfelli, F.; Danailov, M.; Menk, R. H./titolo:Effects of p doping on GaAs%2FAlGaAs SAM-APDs for X-rays detection/doi:10.1088%2F1748-0221%2F15%2F02%2FC02013/rivista:Journal of instrumentation/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:15
This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::532643016e915d8f8b7fcfb4eb52b1f7
http://www.cnr.it/prodotto/i/435663
http://www.cnr.it/prodotto/i/435663
Autor:
Pierpaolo Palestri, Giorgio Biasiol, M. Antonelli, C. Nichetti, Luca Selmi, Fulvia Arfelli, G. Cautero, A. Pilotto, D. De Angelis, F. Rosset, R.H. Menk, T. Steinhartova, Francesco Driussi
Publikováno v:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 977 (2020). doi:10.1016/j.nima.2020.164346
info:cnr-pdr/source/autori:Rosset, F.; Pilotto, A.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; De Angelis, D.; Driussi, F.; Menk, R. H.; Nichetti, C.; Steinhartova, T.; Palestri, P./titolo:A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions/doi:10.1016%2Fj.nima.2020.164346/rivista:NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:977
info:cnr-pdr/source/autori:Rosset, F.; Pilotto, A.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; De Angelis, D.; Driussi, F.; Menk, R. H.; Nichetti, C.; Steinhartova, T.; Palestri, P./titolo:A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions/doi:10.1016%2Fj.nima.2020.164346/rivista:NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:977
An improved version of the Random Path Length algorithm is used to simulate the time response of Separate Absorption and Multiplication Avalanche PhotoDiodes (SAM-APDs) in the linear regime. The model takes into account both the diffusion and the dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a792a79b8459b1f3fb73b8dcd13f7a9
https://hdl.handle.net/11380/1206561
https://hdl.handle.net/11380/1206561
Autor:
Luca Selmi, C. Nichetti, Pierpaolo Palestri, G. Cautero, Fulvia Arfelli, T. Steinhartova, M. Antonelli, Giorgio Biasiol, Francesco Driussi, A. Pilotto, R.H. Menk
Publikováno v:
Journal of instrumentation 14 (2019). doi:10.1088/1748-0221/14/01/C01003
info:cnr-pdr/source/autori:Nichetti C.; Steinhartova T.; Antonelli M.; Cautero G.; Menk R.H.; Pilotto A.; Driussi F.; Palestri P.; Selmi L.; Arfelli F.; Biasiol G./titolo:Gain and noise in GaAs%2FAlGaAs avalanche photodiodes with thin multiplication regions/doi:10.1088%2F1748-0221%2F14%2F01%2FC01003/rivista:Journal of instrumentation/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
info:cnr-pdr/source/autori:Nichetti C.; Steinhartova T.; Antonelli M.; Cautero G.; Menk R.H.; Pilotto A.; Driussi F.; Palestri P.; Selmi L.; Arfelli F.; Biasiol G./titolo:Gain and noise in GaAs%2FAlGaAs avalanche photodiodes with thin multiplication regions/doi:10.1088%2F1748-0221%2F14%2F01%2FC01003/rivista:Journal of instrumentation/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
Avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multi- plication regions (SAM-APDs) will be discussed in terms of capacitance, response to light (gain and noise) and time response. The structures have been fabricated by molec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1d33a3e496d611a0c7fb30f06dc9fa8
https://hdl.handle.net/11380/1169426
https://hdl.handle.net/11380/1169426
Autor:
Giorgio Biasiol, T. Steinhartova, R.H. Menk, Francesco Driussi, David Esseni, Fulvia Arfelli, A. Pilotto, M. Antonelli, Pierpaolo Palestri, Luca Selmi, C. Nichetti, G. Cautero
Publikováno v:
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble (FR), 2019
info:cnr-pdr/source/autori:Pilotto A.; Esseni D.; Menk R.H.; Steinhartova T.; Nichetti C.; Palestri P.; Selmi L.; Antonelli M.; Arfelli F.; Biasiol G.; Cautero G.; Driussi F./congresso_nome:2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)/congresso_luogo:Grenoble (FR)/congresso_data:2019/anno:2019/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:Pilotto A.; Esseni D.; Menk R.H.; Steinhartova T.; Nichetti C.; Palestri P.; Selmi L.; Antonelli M.; Arfelli F.; Biasiol G.; Cautero G.; Driussi F./congresso_nome:2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)/congresso_luogo:Grenoble (FR)/congresso_data:2019/anno:2019/pagina_da:/pagina_a:/intervallo_pagine
We report simulation results for gain and noise in avalanche photodiodes fabricated using heterojunctions of III-V compound semiconductors. We employ a recently developed nonlocal model for impact ionization. The model has been calibrated and validat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69efd47e579404bf329206525b37471d
https://hdl.handle.net/11380/1200316
https://hdl.handle.net/11380/1200316
Autor:
Luca Selmi, Giuseppe Cautero, Francesco Driussi, T. Steinhartova, N. Y. Klein, Ralph H Menk, Pierpaolo Palestri, Fulvia Arfelli, Mario Antonelli, Giorgio Biasiol, A. Pilotto, C. Nichetti
Publikováno v:
I.E.E.E. transactions on electron devices 65 (2018): 1823–1829. doi:10.1109/TED.2018.2817509
info:cnr-pdr/source/autori:Nichetti C.; Pilotto A.; Palestri P.; Selmi L.; Antonelli M.; Arfelli F.; Biasiol G.; Cautero G.; Driussi F.; Klein N.Y.; Menk R.H.; Steinhartova T./titolo:An improved nonlocal history-dependent model for gain and noise in avalanche photodiodes based on energy balance equation/doi:10.1109%2FTED.2018.2817509/rivista:I.E.E.E. transactions on electron devices/anno:2018/pagina_da:1823/pagina_a:1829/intervallo_pagine:1823–1829/volume:65
info:cnr-pdr/source/autori:Nichetti C.; Pilotto A.; Palestri P.; Selmi L.; Antonelli M.; Arfelli F.; Biasiol G.; Cautero G.; Driussi F.; Klein N.Y.; Menk R.H.; Steinhartova T./titolo:An improved nonlocal history-dependent model for gain and noise in avalanche photodiodes based on energy balance equation/doi:10.1109%2FTED.2018.2817509/rivista:I.E.E.E. transactions on electron devices/anno:2018/pagina_da:1823/pagina_a:1829/intervallo_pagine:1823–1829/volume:65
We present a nonlocal history-dependent model for impact ionization gain and noise in avalanche photodiodes (APDs) especially suited for staircase APDs. The model uses a simple energy balance equation to define effective electric fields valid also in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80b31cc5dea92faea1319de2c7d1a3cd
http://hdl.handle.net/11390/1131113
http://hdl.handle.net/11390/1131113
Autor:
G. Cautero, S. Nannarone, Giorgio Biasiol, Fulvia Arfelli, K. Koshmak, C. Nichetti, Luca Selmi, A. Pilotto, T. Steinhartova, Francesco Driussi, Pierpaolo Palestri, M. Antonelli, R.H. Menk, S. Dal Zilio
Publikováno v:
Journal of instrumentation 12 (2017). doi:10.1088/1748-0221/12/11/C11017
info:cnr-pdr/source/autori:Steinhartova T.; Nichetti C.; Antonelli M.; Cautero G.; Menk R.H.; Pilotto A.; Driussi F.; Palestri P.; Selmi L.; Koshmak K.; Nannarone S.; Arfelli F.; Zilio S.D.; Biasiol G./titolo:Influence of ? p-doping on the behaviour of GaAs%2FAlGaAs SAM-APDs for synchrotron radiation/doi:10.1088%2F1748-0221%2F12%2F11%2FC11017/rivista:Journal of instrumentation/anno:2017/pagina_da:/pagina_a:/intervallo_pagine:/volume:12
info:cnr-pdr/source/autori:Steinhartova T.; Nichetti C.; Antonelli M.; Cautero G.; Menk R.H.; Pilotto A.; Driussi F.; Palestri P.; Selmi L.; Koshmak K.; Nannarone S.; Arfelli F.; Zilio S.D.; Biasiol G./titolo:Influence of ? p-doping on the behaviour of GaAs%2FAlGaAs SAM-APDs for synchrotron radiation/doi:10.1088%2F1748-0221%2F12%2F11%2FC11017/rivista:Journal of instrumentation/anno:2017/pagina_da:/pagina_a:/intervallo_pagine:/volume:12
This work focuses on the development and the characterization of avalanche photodiodes with separated absorption and multiplication regions grown by molecular beam epitaxy. The i-GaAs absorption region is separated from the multiplication region by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67d907c1e0eb9fe4a76b50d0f435d7e2
http://hdl.handle.net/11368/2917692
http://hdl.handle.net/11368/2917692