Zobrazeno 1 - 10
of 56
pro vyhledávání: '"550"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:20620-20631
In this study, CZTS thin films were grown by annealing of sputtered films using quaternary single target employing various annealing parameters. The effects of the post-sulfurization treatment, reaction temperature (500, 525, 550 and 575 degrees C) a
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:17374-17387
In this work, thin films of Cu2ZnSnS4 (CZTS) have been successfully electrodeposited onto FTO substrate. The films are post-sulfurized with different amount of sulfur varied from 0 to 0.5 g at 550 °C under N2 atmosphere. Effect of sulfur quantity du
Autor:
Anupam Karmakar, Sanatan Chattopadhyay, Jenifar Sultana, Goutam Kumar Dalapati, Somdatta Paul
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:12878-12887
In the current work, CuO thin films (~ 110 nm) are grown by employing chemical bath deposition (CBD) method on Si substrate for fabricating the p-CuO/n-Si heterojunction photodetectors. The as-grown films are annealed at 250, 550 and 850 °C for 10 m
Autor:
Elahe Shojaee, Mohammad Hossein Habibi
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:5971-5978
Hetero-structured CoTiO3 nano-composite photocatalyst was produced by a modified sol–gel process diethylene glycol as as stabilizer and coated on glass as a thin film by Doctor Blade coating. CoTiO3 nano-composites were calcinated at 550, 650 and 7
Publikováno v:
Journal of Materials Science: Materials in Electronics. 27:10642-10649
Cu(In,Ga)Se2 (CIGS) and (Ag,Cu)(In,Ga)Se2 (ACIGS) films were successfully fabricated on stainless steel substrates using the non-vacuum spin-coating process followed by the selenization process. As the selenization temperature was increased to 550 °
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 39:69-74
Indium tin oxide (ITO) thin films with composition of 9.42 wt% SnO 2 and 89.75 wt% In 2 O 3 , and impurities balanced on glass substrates at room temperature were prepared by electron beam evaporation technique and then were annealed in air atmospher
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:24198-24208
This paper reports the electrical transmission properties of single-crystal PbSe samples prepared via Bi-flux method based on a stoichiometric ratio of Pb:Se:Bi = 1:1: x (x = 2.5, 3, 3.5, 4). Results show that all samples adopt an NaCl structure with
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:18873-18885
Co1-xFe(II)xFe2O4 (x = 0, 0.25, 0.50, 0.75, 1) ferrites are synthesized by the coprecipitation method. The effect of substitution of ferrous ions and subsequent annealing on structural, optical, magnetic, and dielectric properties is investigated. X-
Autor:
D. Paul Joseph, R. Radha, Jean Maria Fernandes, C. Venkateswaran, M. Kovendhan, Reddivari Muniramaiah, Nandarapu Purushothamreddy
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:8435-8445
Transparent conducting electrodes (TCEs) with high electrical conductivity and optical transmittance form an inevitable component in optoelectronic devices. Undoped SnO2 and Li (0 to 3 wt%): F (5 wt%) co-doped SnO2 films were deposited onto glass sub
Autor:
Zhao Qizhong, Azhar Saeed, Awais Ghani, Saleh Khan, Yao Kang Kang, Adil Murtaza, Anwar Ali, Sen Yang, Fazal Kabir, Li Kaili
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:10734-10749
Room temperature ferromagnetism with the doping of magnetic ions in the semiconducting host is the fundamental criterion for the potential use of spintronics material. In the present study, pure and (Fe, Tb) co-doped ZnO nanoparticles were well-prepa