Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Martin Albrecht"'
Autor:
Houari Amari, Tobias Schulz, Toni Markurt, Klaus Irmscher, Jutta Schwarzkopf, Carsten Richter, Aykut Baki, Martin Albrecht, Jens Martin, Julian Stöver
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Homoepitaxial growth of SrTiO3 thin films on 0.5 wt% niobium doped SrTiO3 (100) substrates with high structural perfection was developed using liquid-delivery spin metal–organic vapor phase epitaxy (MOVPE). Exploiting the advantage of adjusting the
The influence of composition of ZnO-Al2O3-SiO2 glass with TiO2 as nucleating agent on crystal phases, crystallite size, and appearance of prepared glass-ceramics has been investigated. Thirteen samples with different ratios of ZnO, Al2O3, and SiO2 we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08105b50c969ce62d5bc982b19f4edfc
https://www.bib.irb.hr/1090614
https://www.bib.irb.hr/1090614
Autor:
Zbigniew Galazka, Martin Albrecht, Ta-Shun Chou, Klaus Irmscher, R. Grüneberg, Andreas Popp, Saud Bin Anooz, Thi Thuy Vi Tran, Palvan Seyidov, Jutta Schwarzkopf
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115323-115323-6 (2021)
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth pa
Autor:
Mike Pietsch, Andreas Fiedler, Zbigniew Galazka, Matthias Bickermann, Robert Schewski, Steffen Ganschow, Martin Albrecht, Detlef Klimm, Klaus Irmscher, Rainer Bertram
Publikováno v:
Journal of Crystal Growth. 486:82-90
We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga2O3 single crystals grown by the Czochralski method, as well as the impact of these dopants on optical properties. The segregation of Cr and Ce and their incorporation into the β-
Autor:
Andrii Nikolenko, O. Belyaev, Vladimir Z. Turkevich, V. B. Kapustianyk, В. Tsykaniuk, Igor Dzięcielewski, Izabella Grzegory, J.L. Weyher, S. Porowski, Martin Albrecht, Marcin Sarzyński, B. Sadovyi, I. A. Petrusha, V. V. Strelchuk
Publikováno v:
Journal of Crystal Growth. 449:35-42
Experimental studies of diffusion of oxygen in bulk wurtzite-type GaN crystals grown by Halide Vapor Phase Epitaxy (HVPE) are reported. Oxygen concentration profiles were studied in as-grown GaN crystals and also after annealing of crystals at temper
Autor:
Andreas Popp, Saud Bin Anooz, Zbigniew Galazka, R. Grüneberg, Klaus Irmscher, Martin Albrecht, Robert Schewski, Andreas Fiedler, Günter Wagner
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The influence of substrate miscut on the surface morphology and Hall mobility at optimized growth conditions of $\beta$ -Ga 2 O 3 layers was investigated. The results demonstrate that the surface morphology and the Hall mobility are impacted by the m
Autor:
C. Wouters, Robert Schewski, Zbigniew Galazka, Martin Albrecht, Wolfram Miller, R. Grüneberg, Klaus Irmscher, Andreas Popp, Ta-Shun Chou, Andreas Fiedler, Jutta Schwarzkopf, S. Bin Anooz
Publikováno v:
Journal of Physics D: Applied Physics. 54:034003
The influence of chamber pressure and Si-doping on the growth rate, surface morphology and Hall mobility was investigated forβ-Ga2O3thin films homoepitaxially grown by metalorganic vapor phase epitaxy on Mg-dopedβ-Ga2O3(100) substrates with 4° mis
Autor:
Sami Suihkonen, Romuald Stankiewicz, Tobias Schulz, Stefanie Wahl, Andreas N. Danilewsky, Martin Albrecht, Klaus Irmscher, Sakari Sintonen, Sylke Meyer, Turkka O. Tuomi, Susanne Richter
Publikováno v:
Journal of crystal growth. 456:51-57
Ammonothermally grown GaN is a promising substrate for high-power optoelectronics and electronics thanks to its scalability and high structural perfection. Despite extensive research, ammonothermal GaN still suffers from significant concentrations of
Autor:
Robert Schewski, M. Baldini, Andreas Fiedler, Klaus Irmscher, Detlef Klimm, Martin Albrecht, Günter Wagner
Publikováno v:
Journal of Materials Science. 51:3650-3656
Sn-doped β-Ga2O3 epitaxial layers have been grown on (100) β-Ga2O3 substrates by metal organic vapour-phase epitaxy. Triethylgallium (TEGa), molecular oxygen (O2) and tetraethyltin (TESn) were used as Ga, O and Sn precursors, respectively. Layers g
Autor:
Andreas Popp, Zbigniew Galazka, Martin Albrecht, R. Grüneberg, C. Wouters, Wolfram Miller, Klaus Irmscher, S. Bin Anooz, Jutta Schwarzkopf, Robert Schewski, Andreas Fiedler, G. Wagner
Publikováno v:
Applied Physics Letters. 116:182106
Homoepitaxial (100) β-Ga2O3 films were grown on substrates with miscut angles of 2°, 4°, and 6° toward [00 1 ¯] by metal organic vapor phase epitaxy. Step-flow growth mode, resulting in smooth film surfaces and high crystalline quality, could on