Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Martin Albrecht"'
Autor:
C. Wouters, Robert Schewski, Zbigniew Galazka, Martin Albrecht, Wolfram Miller, R. Grüneberg, Klaus Irmscher, Andreas Popp, Ta-Shun Chou, Andreas Fiedler, Jutta Schwarzkopf, S. Bin Anooz
Publikováno v:
Journal of Physics D: Applied Physics. 54:034003
The influence of chamber pressure and Si-doping on the growth rate, surface morphology and Hall mobility was investigated forβ-Ga2O3thin films homoepitaxially grown by metalorganic vapor phase epitaxy on Mg-dopedβ-Ga2O3(100) substrates with 4° mis
Autor:
Klaus Irmscher, M. Naumann, Mike Pietsch, Detlef Klimm, Robert Schewski, Reinhard Uecker, Albert Kwasniewski, Zbigniew Galazka, Matthias Bickermann, Rainer Bertram, Martin Albrecht
Publikováno v:
physica status solidi (a). 212:1455-1460
Bulk MgGa2O4 single crystals with inverse spinel structure were grown from the melt by different methods. The degree of inversion could be changed by suitable annealing, which was confirmed by differential scanning calorimetry analysis and correspond
Publikováno v:
physica status solidi (a). 211:543-549
Among the transparent semiconducting oxides β-Ga2O3 is of high interest because of its wide-band gap of 4.8 eV and the corresponding transparency from deep ultraviolet to near infrared spectra. Here, we report on the preparation, structural and temp
Autor:
Detlef Klimm, Martin Albrecht, Reinhard Uecker, Steffen Ganschow, Klaus Irmscher, Christo Guguschev, Robert Schewski, Albert Kwasniewski, Roberto Fornari, Detlev Schulz, Zbigniew Galazka, Rainer Bertram, Mike Pietsch, Matthias Bickermann
Publikováno v:
physica status solidi (a). 211:66-73
SnO2 is a semiconductor with a wide optical bandgap (3.5 eV), which makes it an attractive transparent semiconducting oxide (TSO) for electronic and opto-electronic applications. At elevated temperatures it is, however, much more unstable than other
Autor:
Zbigniew Galazka, Klaus Irmscher, Mike Pietsch, Tobias Schulz, Reinhard Uecker, Roberto Fornari, Robert Schewski, Martin Albrecht, M. Naumann
Publikováno v:
physica status solidi (a). 211:54-58
The onset of optical absorption in In2O3 at about 2.7 eV is investigated by transmission spectroscopy of single crystals grown from the melt. This absorption is not defect related but is due to the fundamental band gap of In2O3. The corresponding spe
Autor:
M. Kryśko, Oliver Brandt, Szymon Grzanka, Christian Hauswald, Jonas Lähnemann, Henryk Turski, Martin Albrecht, Jan L. Weyher, Czeslaw Skierbiszewski, Michal Bockowski, Marcin Siekacz, Caroline Chèze, Grzegorz Muziol
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:03C130
The growth of N-polar (In,Ga)N structures by plasma-assisted molecular beam epitaxy is studied. (In,Ga)N multiple quantum well samples with atomically smooth surface were grown and their good structural quality was confirmed by x-ray diffraction, sca
Publikováno v:
Chemical Communications, 18, 1874. Royal Society of Chemistry
Sensor devices for the detection of low quantities of SO2 gas have been constructed which comprise organoplatinum receptor sites for the selective recognition of SO2 and a quartz crystal microbalance for the detection of small mass changes at the rec