Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Martin Albrecht"'
Autor:
Zbigniew Galazka, Martin Albrecht, Ta-Shun Chou, Klaus Irmscher, R. Grüneberg, Andreas Popp, Saud Bin Anooz, Thi Thuy Vi Tran, Palvan Seyidov, Jutta Schwarzkopf
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115323-115323-6 (2021)
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth pa
Autor:
Martin Schmidbauer, Manfred Ramsteiner, Andreas Fiedler, Zbigniew Galazka, R. Grüneberg, S. Bin Anooz, Robert Schewski, C. Wouters, G. Wagner, Martin Albrecht, Klaus Irmscher, Andreas Popp, Detlef Klimm
Publikováno v:
Journal of Applied Physics. 125:195702
Homoepitaxial β-(In,Ga)2O3 thin films were grown on (100) β-Ga2O3 substrates by metal organic vapor phase epitaxy using triethylgallium (TEGa) and triethylindium (TEIn). Deposition temperatures from 650 to 825 °C and pressures from 5 to 20 mbar ha
Autor:
Mariia Anikeeva, Toni Markurt, Tobias Schulz, Czeslaw Skierbiszewski, P. Wolny, Marcin Siekacz, Martin Albrecht, Marta Sawicka
Publikováno v:
Journal of Applied Physics
We investigate the In content in single monolayer (ML)-thick InxGa1-xN quantum wells (QWs) as a function of the growth temperature ranging from 650 °C to 480 °C, stacked in a superlattice (SL). The SLs were grown by plasma-assisted molecular beam e
Autor:
N. Stolyarchuk, Toni Markurt, Aimeric Courville, O. Tottereau, Philippe Vennéguès, Martin Albrecht, Keith L. March
Publikováno v:
Journal of Applied Physics. 122:155303
In this work, we study the basic processes during the initial stages of growth which control polarity in N-polar AlN films grown on c-plane sapphire substrates by metalorganic chemical vapor deposition. More specifically, we study the morphology and
Autor:
Vincenzo Grillo, A. Yu. Egorov, Horst P. Strunk, T. Remmele, Henning Riechert, Martin Albrecht
Publikováno v:
Journal of Applied Physics. 90:3792-3798
We propose a method that solves the problem of the independent determination of the indium and nitrogen concentrations in a strained quaternary InGaAsN superlattice. The method is experimentally based on the simultaneous measurement: (i) of the tetra
Publikováno v:
E-Prints Complutense. Archivo Institucional de la UCM
instname
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
Scopus-Elsevier
instname
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
Scopus-Elsevier
Combined electron beam induced current and transmission electron microscopy (TEM) measurements have been performed on both undoped and Si-doped AlGaN epitaxial films with aluminum contents x ranging from x = 0 to x = 0.79, in order to correlate the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a725fb39a0ed351299a2d7c0eec85ad
https://eprints.ucm.es/id/eprint/23397/1/CremadesAna40libre.pdf
https://eprints.ucm.es/id/eprint/23397/1/CremadesAna40libre.pdf
Autor:
Horst P. Strunk, T. Remmele, Michael Becker, Silke Christiansen, M. Cazayous, F. Demangeot, R. Sirvin, J. Groenen, Martin Albrecht, M. Caumont, H. Wawra
Publikováno v:
Journal of Applied Physics. 91:6772
We have investigated self-assembled Si1−xGex islands grown on Si (001). We show that the average composition and both the exx and ezz average strain components can be derived from Raman scattering spectra. Both nm-sized and μm-sized islands are in